© 2007 IXYS All rights reserved
1 - 2
MWI 100-06 A8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
Features
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NPT IGBT technology
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low saturation voltage
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low switching losses
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switching frequency up to 30 kHz
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square RBSOA, no latch up
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high short circuit capability
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positive temperature coefficient for
easy parallelling
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MOS input, voltage controlled
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ultra fast free wheeling diodes
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solderable pins for PCB mounting
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package with copper base plate
Advantages
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space savings
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reduced protection circuits
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package designed for wave soldering
Typical Applications
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AC motor control
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AC servo and robot drives
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power supplies
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
T
C
= 25°C 130 A
I
C80
T
C
= 80°C 88 A
RBSOA V
GE
=
±
15 V; R
G
= 2.2 Ω; T
VJ
= 125°C I
CM
= 200 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 2.2 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 410 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 100 A; V
GE
= 15 V; T
VJ
= 25°C 2.0 2.5 V
T
VJ
= 125°C 2.3 V
V
GE(th)
I
C
= 1.5 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 1.2 mA
T
VJ
= 125°C 0.9 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 400 nA
t
d(on)
25 ns
t
r
11 ns
t
d(off)
150 ns
t
f
30 ns
E
on
1.0 mJ
E
off
2.9 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 4.3 nF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 125 A 340 nC
R
thJC
(per IGBT) 0.3 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 100 A
V
GE
=
±
15 V; R
G
= 2.2 Ω
I
C25
= 130 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.0 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
See outline drawing for pin arrangement
E72873
Preliminary data
