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RK7002BT116

P1-P3P4-P6
RK7002B
1/5
www.rohm.com
○
c
2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
2.5V Drive Nch MOSFET
RK7002B
Structure
Dimensions
(Unit : mm)
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(SST3).
3) Low voltage drive(2.5V drive).
Application
Switching
Packaging specifications
Inner circuit
Package Taping
Code T116
Basic ordering unit (pieces) 3000
RK7002B
Absolute maximum ratings
(Ta = 25
C)
Symbol Limits Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GSS
20 V
Continuous I
D
250 mA
Pulsed I
DP
1A
Continuous I
S
150 mA
Pulsed I
SP
1A
Total power dissipation P
D
0.2 W
Channel temperature Tch 150
C
Range of storage temperature Tstg
55 to +150
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Thermal resistance
Symbol Limits Unit
Channel to ambient Rth (ch-a) 625
C / W
* Each terminal mounted on a recommended land.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*2
*1
*1
*
*2
*1
*1
A
bbreviated symbol : RKT
SST3
<SO T-23>
∗2
∗1
(2)
(1)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) SOURCE
(2) GATE
(3) DRAIN
2/5
www.rohm.com
○
c
2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
Data Sheet RK7002B
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--
10
AV
GS
=
20V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
60 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1
AV
DS
=60V, V
GS
=0V
Gate threshold voltage V
GS (th)
1.0 - 2.3 V V
DS
=10V, I
D
=1mA
-1.72.4 I
D
=250mA, V
GS
=10V
-2.13.0 I
D
=250mA, V
GS
=4.5
V
-2.33.2 I
D
=250mA, V
GS
=4.0
V
- 3.0 12.0 I
D
=10mA, V
GS
=2.5V
Forward transfer admittance l Y
fs
l 0.25 - - S I
D
=250mA, V
DS
=10V
Input capacitance C
iss
-15-pFV
DS
=25V
Output capacitance C
oss
-4.5-pFV
GS
=0V
Reverse transfer capacitance C
rss
2 - pF f=1MHz
Turn-on delay time t
d(on)
-3.5-nsI
D
=100mA, V
DD
30
V
Rise time t
r
-5-nsV
GS
=10V
Turn-off delay time t
d(off)
-18-nsR
L
300
Fall time t
f
-28-nsR
G
=10
*Pulsed
ConditionsParameter
Static drain-source on-state
resistance
R
DS (on)
*
*
*
*
*
*
*
*
*
*
*
*
*
*
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward voltage V
SD
--1.2VI
s
=250mA, V
GS
=0V
*Pulsed
ConditionsParameter
*
3/5
www.rohm.com
○
c
2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
Data Sheet RK7002B
Electrical characteristics curves
0.1
1
10
100
0.001 0.01 0.1 1
Ta=125
C
Ta=75
C
Ta=25
C
Ta= -25
C
V
GS
= 4.5V
Pulsed
0.1
1
10
100
0.001 0.01 0.1 1
Ta=125
C
Ta=75
C
Ta=25
C
Ta= -25
C
V
GS
= 10V
Pulsed
Ta=125
C
Ta=75
C
Ta=25
C
Ta= -25
C
V
GS
= 2.5V
Pulsed
0.1
1
10
100
0.001 0.01 0.1 1
Ta=125
C
Ta=75
C
Ta=25
C
Ta= -25
C
V
GS
= 4.0V
Pulsed
0.01
0.1
1
0.001 0.01 0.1 1
Ta= -25
C
Ta=25
C
Ta=75
C
Ta=125
C
V
DS
= 10V
Pulsed
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( II )
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( III )
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
Fig.9 Forward Transfer Admittance
vs. Drain Current
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[

]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[

]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[

]
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[

]
0
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1
V
GS
= 2.5V
V
GS
= 2.8V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Ta= 25
C
Pulsed
Fig.1 Typical Output Characteristics( I )
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
0
0.1
0.2
0.3
0.4
0.5
0246810
V
GS
= 2.5V
V
GS
= 2.8V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Ta= 25
C
Pulsed
Fig.2 Typical Output Characteristics( II )
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN CURRENT : I
D
[A]
0.0001
0.001
0.01
0.1
1
0 0.5 1 2 3
Ta=125
C
Ta=75
C
Ta=25
C
Ta= -25
C
V
DS
= 10V
Pulsed
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE :
0.1
1
10
100
0.001 0.01 0.1 1
V
GS
= 2.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
Ta= 25
C
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( I )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[

]
V
GS
[V]
DRAIN-CURRENT : I
D
[A]
1.5
2.5
P1-P3P4-P6

RK7002BT116

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MOSFET N-CH 60V 0.25A SOT-23
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