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ESDAVLC8-4BN4

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
March 2014 DocID022192 Rev 3 1/10
10
ESDAVLC8-4BN4
4-line very low capacitance Transil™ array for ESD protection
Datasheet
−
production data
Figure 1. Functional diagram (top view)
Features
• Stand-off voltage: 3 V
• Very low capacitance: 4.5 pF
• Small package: 1.0 x 0.8 mm
• Very thin package: 0.40 mm max
• Low leakage current: 50 nA at 25 °C
Benefits
• High ESD robustness of the equipment
• Suitable for high speed interface
Complies with the following standards:
• IEC 61000-4-2:
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
• MIL STD 883G- Method 3015-7: class3B:
– >25 kV (human body model)
Applications
Where transient overvoltage protection and
electrical overstress protection in sensitive
equipment is required, such as:
• Communication systems
• Cellular phone handsets and accessories
• Video equipment
Description
The ESDAVLC8-4BN4 is monolithic array
designed to protect up to 4 lines against ESD
transients. It has been designed specifically for
the protection of the high speed interface of
integrated circuits in portable equipment and
miniaturized electronics devices. The µQFN-4L
package minimizes PCB space.
TM: Transil is a trademark of STMicroelectronics.
µQFN-4L
GND
I/O1
I/O2
I/O3
I/O4
www.st.com
Characteristics ESDAVLC8-4BN4
2/10 DocID022192 Rev 3
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Note: For component test in its final application, the minimum clamping voltage has to be 20 V on
V
BR1
(GND to I/O) and 25 V on V
BR2
(I/O to GND).
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage, IEC 61000-4-2, level 4 (contact discharge) 16 kV
P
PP
Peak pulse power dissipation (8/20 µs)
(1)
T
j
initial = T
amb
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
GND to I/O
I/O to GND
45
32
W
I
pp
Peak pulse current (8/20 µs) 1.6 A
T
j
Maximum junction temperature range -40 to 125 °C
T
stg
Storage temperature range -55 + 150 °C
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR1
I
R
= 1 mA, GND to I/O 8.5 11 14 V
V
BR2
I
R
= 1 mA, I/O to GND 14.5 17 20 V
I
RM
V
RM
= 3 V
50 nA
V
CL
I
pp
= 1 A, 8/20 µs, GND to I/O 20
V
I
pp
= 1 A, 8/20 µs, I/O to GND 28
CV
I/O
= 0 V, F
= 1 MHz, V
osc
= 30 mV 4.5 5.5 pF
R
d
Dynamic resistance,
pulse width 100 ns
I/O to GND 0.36
Ω
GND to I/O 0.28
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
I = Peak pulse current
BR
RM RM
RM
PP
V = Clamping voltage
CL
DocID022192 Rev 3 3/10
ESDAVLC8-4BN4 Characteristics
Figure 3. Peak pulse power versus initial
junction temperature (8/20 µs waveform)
Figure 4. Peak pulse power versus exponential
pulse duration
P
pp
(W)
0
20
40
60
80
100
25 35 45 55 65 75 85 95 105 115 125 135 145
8/20 µs
Direct
Reverse
T (°C)
j
P (W)
PP
1
10
100
10 100 1000
T
j
=25 °C
Direct
Reverse
t (µs)
p
Figure 5. Clamping voltage versus peak pulse
current (typical values, 8/20 µs waveform)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
I (A)
PP
0.1
1.0
10.0
10 20 30
8/20µs
Tj initial = 25 °C
Direct
Reverse
V (V)
CL
C(pF)
0.0
1.0
2.0
3.0
4.0
5.0
0123456
F=1 MHz
V
osc
=30mV
RMS
Vr=0V
T
j
=25 °C
Direct
Reverse
V
R
(V)
Figure 7. ESD response to IEC 61000-4-2
(+8 kV contact discharge) on each channel
Figure 8. ESD response to IEC 61000-4-2
(-8 kV contact discharge) on each channel
10 V/div
20 ns/div
10 V/div
20 ns/div
P1-P3P4-P6P7-P9P10-P10

ESDAVLC8-4BN4

Mfr. #:
Buy ESDAVLC8-4BN4
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors 4line Lo Cap 3V Transil array 4.5pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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