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TBD62387AFNG,EL

P1-P3P4-P6P7-P9P10-P10
TBD62387A series
2017-03-21
4
Operating Ranges (Ta = −40 to 85°C, unless otherwise specified.)
Characteristics Symbol Test conditions Min Typ. Max Unit
Power supply voltage V
CC
― 4.5 5.0
5.5
V
Output voltage V
OUT
― ― ―
50
V
COMMON pin voltage V
COM
― 0 ―
50
V
Output
current
(per ch)
PG (Note1)
I
OUT
1 circuit ON, Ta = 25°C 0 ―
400
mA
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10 % 0 ―
400
Duty = 50 % 0 ―
195
FNG (Note2)
1 circuit ON, Ta = 25°C 0 ―
400
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10 % 0 ―
320
Duty = 50 % 0 ―
140
Input voltage (Output on) V
IN (ON)
I
OUT
= 100 mA or more, V
OUT
= 2 V 0 ―
V
CC
-3.5
V
Input voltage (Output off) V
IN (OFF)
I
OUT
= 100 μA or less, V
OUT
= 2 V V
CC
-0.4 ―
5.5
V
Clamp diode
forward current
I
F
― ― ―
400
mA
Note1: On PCB (compliant with JEDEC 2s2p)
Note2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy).
Electrical Characteristics (Ta = 25°C, unless otherwise specified.)
Characteristics Symbol
Tes t
Circuit
Tes t c onditions Min Typ. Max Unit
Output leakage current I
leak
1
V
OUT
= 50 V, Ta = 85 °C
V
IN
= V
CC
= 5.5 V
― ― 1.0 μA
Output voltage
(Output ON-resistance)
V
DS
(R
ON)
2
I
OUT
= 350 mA
V
CC
= 5.0 V, V
IN
= 0 V
―
0.53
(1.5)
1.14
(3.25)
V
(Ω)
I
OUT
= 200 mA,
V
CC
= 5.0 V, V
IN
= 0 V
―
0.30
(1.5)
0.65
(3.25)
I
OUT
= 100 mA
V
CC
= 5.0 V, V
IN
= 0 V
―
0.15
(1.5)
0.325
(3.25)
Input current
I
IN(ON)
3 V
CC
= 5.5 V, V
IN
= 0 V ― -10 -100 μA
I
IN(OFF)
4 V
CC
= V
IN
=5.5 V
― ―
1.0 μA
Clamp diode reverse current I
R
5 V
R
= 50 V, Ta = 85 °C ― ― 1.0 μA
Clamp diode forward voltage
V
F
6 I
F
= 350 mA ― ― 2.0 V
Consumption current (per ch)
I
CC(ON)
3 V
CC
= 5.5 V, V
IN
= 0 V ― 60 200 μA
I
CC(OFF)
4 V
CC
= 5.5 V, V
IN
= V
CC
― ― 1.0 μA
Turn-on delay t
ON
7
V
CC
= 5.0 V, V
OUT
= 50 V
R
L
= 125 Ω
C
L
= 15 pF
― 0.6 ―
μs
Turn-off delay t
OFF
― 0.6 ―
TBD62387A series
2017-03-21
5
Test Circuit
1. I
leak
2. V
DS
(R
ON
)
3. I
IN(ON),
I
CC(ON)
4. I
IN(OFF),
I
CC(OFF)
5. I
R
6.
V
F
Test circuits may be omitted partially or simplified for explanatory purpose.
COMMON
OUTPUT
INPUT
GND
V
OUT
I
OUT
V
DS
R
ON
= V
DS
/ I
OUT
I
leak
VCC
V
IN
V
CC
COMMON
OUTPUT
INPUT
GND
VCC
V
IN
V
CC
COMMON
OUTPUT
INPUT
GND
VCC
V
IN
V
CC
I
CC(ON)
I
IN(ON)
COMMON
OUTPUT
INPUT
GND
VCC
V
IN
V
CC
I
CC(OFF)
I
IN(OFF)
COMMON
OUTPUT
INPUT
GND
I
F
V
F
COMMON
OUTPUT
INPUT
GND
I
R
V
R
VCC
VCC
TBD62387A series
2017-03-21
6
7. t
ON
, t
OFF
Note1: Pulse width 50 μs, Duty cycle 10 %
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0 V
Note2: C
L
includes capacitance of the probe and the test board.
Test circuits and timing charts may be omitted partially or simplified for explanatory purpose.
Precautions for Using
This IC does not incorporate built-in protection circuits for excess current or over voltage. Therefore, if the short-circuit
between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage beyond
the absolute maximum rating is impressed, and IC may be destroyed.
When designing, please consider enough in power supply line, output line, and GND line. In addition, so as not to continue
to flow a current that exceeds the absolute maximum rating of the IC, please insert the appropriate fuse in the power supply
line.
10%
50%
t
ON
t
OFF
t
r
t
f
V
IH
V
OH
V
OL
Input
50%
90%
50 μs
Output
50%
50%
90%
10%
P1-P3P4-P6P7-P9P10-P10

TBD62387AFNG,EL

Mfr. #:
Buy TBD62387AFNG,EL
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 8-CH 50V 0.5A
Lifecycle:
New from this manufacturer.
Delivery:
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