UMF23NTR Datasheet UMF23NTR | P1-P3

EMF23/UMF23N

Transistors

1/4

Power management (dual transistors)

EMF23/UMF23N

2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package.

zApplication

Power management circuit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuits

R

1

R

2

DTr2 Tr1

(1)(2)(3)

(4) (5) (6)

R

1

=10kΩ

R

2

=10kΩ

zExternal dimensions (Units : mm)

ROHM : EMT6

EMF23

ROHM : UMT6

EIAJ : SC-88

UMF23N

Abbreviated symbol :F23

Abbreviated symbol : F23

0.22

1.2

1.6

(

1

)

(

2

)(

5

)

(

3

)

(

6

)

(

4

)

0.13

0.5

1.0

1.6

Each lead has same dimensions

0∼0.1

(

6

)

2.0

1.3

0.9

0.15

0.7

0.1Min.

2.1

0.65

0.2

1.25

(

1

)

0.65

(

4

)

(

3

)

(

2

)

(

5

)

zPackage, marking, and packaging specifications

Type UMF23N

UMT6

F23

TR

3000

Package

Marking

Code

Basic ordering unit(pieces)

EMF23

EMT6

F23

T2R

8000

EMF23/UMF23N

Transistors

2/4

zAbsolute maximum ratings (Ta=25°C)

Tr1

Parameter Symbol

Limits

Unit

V

CBO −60 V

−50 V

V

CEO

VEBO

−6

I

C mA

−150

Tj

150

Tstg −55 to +150

P

C

150 (TOTAL)

mW

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector power dissipation

∗

120mW per element must not be exceeded.

C

DTr2

Parameter

∗1 Characteristics of built-in transistor.

∗2 120mW per element must not be exceeded.

Each terminal mounted on a recommended land.

Symbol

V

CC

VIN

IC

IO

PC

Tj

Tstg

Limits

50

−10~+40

100

50

150(TOTAL)

150

−55 to +150

∗1

∗2

Unit

V

mA

mW

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

C

zElectrical characteristics (Ta=25°C)

Tr1

Parameter Symbol

BV

CBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

Cob

Min.

−60

−50

−6

−

180

−

4

−

−0.1

390

−0.5

5

VI

C

=−

50µA

I

C

=−

1mA

I

E

=−

50µA

V

CB

=−

60V

V

EB

=−6

V

CE

=−

6V, IC

=−

1mA

I

C/IB

=−

50mA/−5mA

V

µA

−

V

pF

Typ. Max. Unit Conditions

fT

− 140 −

V

CE

=−

12V, IE

=

2mA, f

=

100MHz

V

CB

=−

12V, IE

=

0A, f

=

1MHz

MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Output capacitance

DTr2

Parameter Symbol

V

I(off)

V

I(on)

V

O(on)

I

O(off)

R

1

G

I

R

2

/R

1

f

T

Min.

−

3

−

7

30

0.8

−

0.1

−

10

−

1

250

0.5

−

0.3

0.88

0.5

13

−

1.2

−

V

CC

=5V, I

O

=100µA

V

O

=0.3V, I

O

=10mA

I

O

/I

I

=10mA/0.5mA

V

I

=5V

V

CC

=50V, V

I

=0V

V

O

=5V, I

O

=5mA

V

CE

=10V, I

E

=−5mA, f=100MHz ∗

V

mA

µA

kΩ

−

−−

−

MHz

Typ. Max. Unit Conditions

Input voltage

Output voltage

Input current

Output current

Input resistance

DC current gain

Resistance ratio

Transition frequency

∗ Transition frequency of the device

EMF23/UMF23N

Transistors

3/4

zElectrical characteristic curves

Tr1

-0.2

COLLECTOR CURRENT : Ic

(mA)

-50

-20

-10

-5

-2

-1

-0.5

-0.2

-0.1

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

V

CE

= −6V

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.1 Grounded emitter propagation

characteristics

Ta = 100°C

25°C

−

40°C

-0.4

-4

-8

-1.20

-2

-6

-10

-0.8 -1.6 -2.0

-3.5µA

-7.0

-10.5

-14.0

-17.5

-21.0

-24.5

-28.0

-31.5

I

B

= 0

Ta = 25°C

-35.0

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( Ι )

-40

-80

-5-3 -4-2-1

-20

-60

-100

0

I

B

= 0

Ta = 25°C

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

-50µA

-100

-150

-200

-250

-500

-450

-400

-350

-300

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : h

FE

Ta = 25°C

V

CE

= -5V

-3V

-1V

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs. collector

current ( Ι )

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.5 DC current gain vs. collector

current ( ΙΙ )

V

CE

= -6V

Ta = 100°C

-40°C

25°C

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

Ta = 25°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( Ι )

I

C

/I

B

= 50

20

10

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( ΙΙ )

l

C

/l

B

= 10

Ta = 100°C

25°C

-40°C

50 1000.5 20

50

100

200

500

1000

12 510

EMITTER CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.8 Gain bandwidth product vs.

emitter current

Ta = 25°C

V

CE

= -12V

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

EMITTER TO BASE VOLTAGE : V

EB

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

pF)

EMITTER INPUT CAPACITANCE : Cib (

pF)

Collector output capacitance vs.

Emitter input capacitance vs.

collector-base voltage

emitter-base voltage

Fig.9

-0.5 -20

2

5

10

-1 -2 -5 -10

20

Cib

Cob

Ta = 25

°C

f

=

1MHz

I

E

= 0A

I

C

= 0A

UMF23NTR

UMF23NTR

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