IMT17-7 Datasheet IMT17-7 | P1-P3

IMT17

Document number: DS31202 Rev. 4 - 2

1 of 4

www.diodes.com

March 2009

IMT17

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin Annealed Over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.016 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-60 V

Collector-Emitter Voltage

V

CEO

-50 V

Emitter-Base Voltage

V

EBO

-5.0 V

Continuous Collector Current

I

C

-500 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @T

A

= 25°C P

D

300 mW

Thermal Resistance, Junction to Ambient Air (Note 3) @T

A

= 25°C

R

θ

JA

417

°C /W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

-60 — — V

I

C

= -100μA

Collector-Emitter Breakdown Voltage

V

(

BR

)

CEO

-50 — — V

I

C

= -1.0mA

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

-5.0 — — V

I

E

= -100μA

Collector Cutoff Current

I

CBO

— — -0.1

μA

V

CB

= -30V

Emitter Cutoff Current

I

EBO

— — -0.1

μA

V

EB

= -4.0V

ON CHARACTERISTICS (Note 4)

DC Current Gain

h

FE

120 — 390 —

V

CE

= -3.0V, I

C

= -100mA

Collector-Emitter Saturation Voltage (Note 3)

V

CE

(

SAT

)

— — -0.6 V

I

C

= -500mA, I

B

= -50mA

SMALL SIGNAL CHARACTERISTICS

Gain Bandwidth Product

f

T

— 200 — MHz

V

CE

= -5V, I

E

= 20mA,

f = 100MHz

Output Capacitance

C

ob

— 7 — pF

V

CB

= -10V, I

E

= 0, f = 1MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 4 or on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Short duration pulse test used to minimize self-heating effect.

Top View

Device Schematic

E2

C2

C1

E1

B2

B1

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IMT17

Document number: DS31202 Rev. 4 - 2

2 of 4

www.diodes.com

March 2009

IMT17

0

50

100

25 50

75

100 125

150

175

200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

A

150

200

250

300

350

400

0

012345

-V , COLLECTOR EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

I = -2mA

B

I = -4mA

B

I = -6mA

B

I = -8mA

B

I = -10mA

B

0.001 0.01 0.1 1

-I , COLLECTOR CURRENT (A)

C

h, D

C

U

R

E

N

T

G

AI

N

FE

Fig. 3 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -3V

CE

0.01

0.1

1

0.001 0.01 0.1 1

-I , COLLECTOR CURRENT (A)

C

-V ,

C

O

LLE

C

T

O

R

EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

0

0.2

0.4

0.6

0.8

1

1.2

0.001 0.01 0.1 1

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -3V

CE

0

0.2

0.4

0.6

0.8

1

1.2

0.001 0.01 0.1 1

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

IMT17

Document number: DS31202 Rev. 4 - 2

3 of 4

www.diodes.com

March 2009

IMT17

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

C

ibo

C

obo

f = 1MHz

0

50

100

150

200

250

300

0 20406080100

I , EMITTER CURRENT (mA)

E

f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

T

Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current

V = -5V

f = 100MHz

CE

Ordering Information (Note 5)

Part Number Case Packaging

IMT17-7 SOT-26 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

SOT-26

Dim Min Max Typ

A 0.35 0.50 0.38

B 1.50 1.70 1.60

C 2.70 3.00 2.80

D

⎯ ⎯

0.95

H 2.90 3.10 3.00

J 0.013 0.10 0.05

K 1.00 1.30 1.10

L 0.35 0.55 0.40

M 0.10 0.20 0.15

α

0° 8°

⎯

All Dimensions in mm

KP1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

KP1 YM

A

M

J

L

D

B C

H

K

IMT17-7

IMT17-7

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