MPS6727 Datasheet MPS6727, MPS6726G, MPS6726 | P1-P3

August, 2010 − Rev. 4

1 Publication Order Number:

MPS6726/D

MPS6726

One Watt Amplifier

Transistors

PNP Silicon

Features

• This is a Pb−Free Device*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

−30 Vdc

Collector−Base Voltage V

CBO

−40 Vdc

Emitter−Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

C

−1.0 Adc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MARKING DIAGRAM

http://onsemi.com

MPS

6726

AYWW G

G

COLLECTOR

3

2

BASE

1

EMITTER

Device Package Shipping

†

ORDERING INFORMATION

MPS6726G TO−92

(Pb−Free)

5000 Units / Bulk

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

MPS6726

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −10 mAdc, I

B

= 0)

V

(BR)CEO

−30 −

Vdc

Collector−Base Breakdown Voltage

(I

C

= −100 mAdc, I

E

= 0)

V

(BR)CBO

−40 −

Vdc

Emitter−Base Breakdown Voltage

(I

E

= −100 mAdc, I

C

= 0)

V

(BR)EBO

−5.0 − Vdc

Collector Cutoff Current

(V

CB

= −40 Vdc, I

E

= 0)

I

CBO

− −0.1

mAdc

Emitter Cutoff Current

(V

EB

= −5.0 Vdc, I

C

= 0)

I

EBO

− −0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= −100 mAdc, V

CE

= −1.0 Vdc)

(I

C

= −1000 mAdc, V

CE

= −1.0 Vdc)

h

FE

60

50

−

250

−

Collector−Emitter Saturation Voltage

(I

C

= −1000 mAdc, I

B

= −100 mAdc)

V

CE(sat)

− −0.5

Vdc

Base −Emitter On Voltage

(I

C

= −1000 mAdc, V

CE

= −1.0 Vdc)

V

BE(on)

− −1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Collector−Base Capacitance

(V

CB

= −10 Vdc, I

E

= 0, f = 1.0 MHz)

C

cb

− 30

pF

Small−Signal Current Gain

(I

C

= −50 mAdc, V

CE

= −10 Vdc, f = 20 MHz)

h

fe

2.5 25

−

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

-1000-10

I

C

, COLLECTOR CURRENT (mA)

200

100

70

I

B

, BASE CURRENT (mA)

-5.0 -50

-0.6

-0.2

0

h

FE

, CURRENT GAIN

, COLLECTOR VOLTAGE (VOLTS)

50

20

-100-20 -50 -200 -500 -10 -20-0.05 -0.1 -0.2 -2.0

-0.4

-0.8

-1.0

-0.01 -0.5 -1.0-0.02 -100

V

CE

V

CE

= -1.0 V

T

J

= 25°C

T

J

= 25°C

I

C

=

-100

mA

I

C

=

-50 mA

I

C

=

-1000 mA

I

C

=

-10 mA

I

C

=

-500 mA

I

C

=

-250

mA

MPS6726

http://onsemi.com

3

Figure 3. “ON” Voltages Figure 4. Temperature Coefficient

-100 -500-1.0

I

C

, COLLECTOR CURRENT (mA)

0

-1.0

-0.8

-0.6

-0.4

-0.2

I

C

, COLLECTOR CURRENT (mA)

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-200

V, VOLTAGE (VOLTS)

-2.0 -5.0 -10 -20 -50

T

J

= 25°C

V

BE(SAT)

@ I

C

/I

B

= 10

-1000

-100 -500-1.0 -200-2.0 -5.0 -10 -20 -50

qV

B

for V

BE

-1000

qV °

V

CE(SAT)

@ I

C

/I

B

= 10

V

BE(ON)

@ V

CE

= -1.0 V

, TEMPERATURE COEFFICIENT (mV/ C)

B

Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance

-20 -100-10

I

C

, COLLECTOR CURRENT (mA)

200

100

70

50

30

V

R

, REVERSE VOLTAGE (VOLTS)

-5.0 -20C

obo

160

120

80

0

-50

, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)f

T

-200 -1000-500

300

-10 -25-15

40

C, CAPACITANCE (pF)

T

J

= 25°C

-1.0 -4.0C

ibo

-2.0 -5.0-3.0

C

obo

C

ibo

V

CE

= -10 V

T

J

= 25°C

f = 20 MHz

Figure 7. Active Region — Safe Operating Area

-10-1.0

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-500

-200

-100

-50

-20

-10

-30

I

C

, COLLECTOR CURRENT (mA)

-2.0 -5.0 -40

-1.0 k

MPS6726

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS6727

-20

DUTY CYCLE ≤ 10%

T

A

= 25°C

T

C

= 25°C

1.0 s

1.0 ms

100 ms

MPS6727

MPS6727

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