ZVP4424A Datasheet ZVP4424ASTZ, ZVP4424ASTOB, ZVP4424A | P1-P3

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2  SEPTEMBER 94

FEATURES

* 240 Volt V

DS

*R

DS(on)

=9Ω

* Low threshold

APPLICATIONS

* Electronic Hook Switch

REFER TO ZVP4424A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

DS

-240 V

Continuous Drain Current at T

amb

=25°C I

D

-200 mA

Pulsed Drain Current I

DM

-1 A

Gate Source Voltage V

GS

± 40

V

Power Dissipation at T

amb

=25°C P

tot

750 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV

DSS

-240 V I

D

=-1mA, V

GS

=0V

Gate-Source Threshold

Voltage

V

GS(th)

-0.7 -1.4 -2.0 V ID=-1mA, V

DS

= V

GS

Gate-Body Leakage I

GSS

100 nA

V

GS

=± 40V, V

DS

=0V

Zero Gate Voltage Drain

Current

I

DSS

-10

-100

µA

V

DS

=-240 V, V

GS

=0

V

DS

=-190V, V

GS

=0V, T=125°C

On-State Drain Current I

D(on)

-0.75 -1.0 A V

DS

=-10 V, V

GS

=-10V

Static Drain-Source

On-State Resistance

R

DS(on)

7.1

8.8

9

11

Ω

V

GS

=-10V,I

D

=-200mA

V

GS

=-3.5V,I

D

=-100mA

Forward

Transconductance (1) (2)

g

fs

125 mS V

DS

=-10V,I

D

=-0.2A

Input Capacitance (2) C

iss

100 200 pF

V

DS

=-25V, V

GS

=0V, f=1MHz

Common Source Output

Capacitance (2)

C

oss

18 25 pF

Reverse Transfer

Capacitance (2)

C

rss

515pF

Turn-On Delay Time (2)(3) t

d(on)

815ns

V

DD

≈−50V, I

D

=-0.25A,

V

GEN

=-10V

Rise Time (2)(3) t

r

815ns

Turn-Off Delay Time (2)(3) t

d(off)

26 40 ns

Fall Time (2)(3) t

f

20 30 ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

E-Line

TO92 Compatible

3-439

ZVP4424C

3-436

G

D

S

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2  SEPTEMBER 94

FEATURES

* 240 Volt V

DS

*R

DS(on)

=9Ω

* Low threshold

APPLICATIONS

* Electronic Hook Switch

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

DS

-240 V

Continuous Drain Current at T

amb

=25°C I

D

-200 mA

Pulsed Drain Current I

DM

-1 A

Gate Source Voltage V

GS

± 40

V

Power Dissipation at T

amb

=25°C P

tot

750 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV

DSS

-240 V I

D

=-1mA, V

GS

=0V

Gate-Source Threshold

Voltage

V

GS(th)

-0.7 -1.4 -2.0 V ID=-1mA, V

DS

= V

GS

Gate-Body Leakage I

GSS

100 nA

V

GS

=± 40V, V

DS

=0V

Zero Gate Voltage Drain

Current

I

DSS

-10

-100

µA

V

DS

=-240 V, V

GS

=0

V

DS

=-190V, V

GS

=0V, T=125°C

On-State Drain Current I

D(on)

-0.75 -1.0 A V

DS

=-10 V, V

GS

=-10V

Static Drain-Source

On-State Resistance

R

DS(on)

7.1

8.8

9

11

Ω

V

GS

=-10V,I

D

=-200mA

V

GS

=-3.5V,I

D

=-100mA

Forward

Transconductance (1) (2)

g

fs

125 mS V

DS

=-10V,I

D

=-0.2A

Input Capacitance (2) C

iss

100 200 pF

V

DS

=-25V, V

GS

=0V, f=1MHz

Common Source Output

Capacitance (2)

C

oss

18 25 pF

Reverse Transfer

Capacitance (2)

C

rss

515pF

Turn-On Delay Time (2)(3) t

d(on)

815ns

V

DD

≈−50V, I

D

=-0.25A,

V

GEN

=-10V

Rise Time (2)(3) t

r

815ns

Turn-Off Delay Time (2)(3) t

d(off)

26 40 ns

Fall Time (2)(3) t

f

20 30 ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

E-Line

TO92 Compatible

ZVP4424A

D

G

S

TYPICAL CHARACTERISTICS

0-2-4-6-8-10

-1.2

Transfer Characteristics

V

DS

=-10V

300µs Pulsed Test

I

D

-

Drain Cur

r

e

nt

(

Am

ps)

VGS - Gate Source Voltage (Volts)

-0.8

-0.6

-0.4

0

-0.2

-1.0

0 -2 -4 -6 -8 -10

-1.2

Saturation Characteristics

I

D

- Drain Curre

n

t (Amps)

V

DS

- Drain Source Voltage (Volts)

-0.8

-0.6

-0.4

0

-0.2

-1.0

300µs Pulsed Test

V

GS

=-10V

-5V

-4V

-3V

-2.5V

-2V

Transconductance v drain current

I

D

- Drain Current (Amps

)

g

fs

-Transconductance (mS)

300

0 -0.2 -0.4 -0.6 -0.8 -1.0

400

Transconductance v gate-source voltage

V

GS

-Gate Source Voltage (Volts)

g

fs

-Transconductance (mS)

0-2-4-6

300µs Pulsed Test

V

DS

=-10V

300µs Pulsed Test

V

DS

=-10V

Normalised R

DS(on)

and V

GS(th)

vs Temperature

Junction Temperature (°C)

Normalis

ed R

D

S(o

n

)

a

nd

V

G

S(th)

-50

-25 0 25 50 75

125

100 150

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drai

n

-

S

o

u

rce

Resi

s

ta

n

c

e R

DS(

o

n)

G

ate

T

h

res

h

o

l

d

Vo

l

tag

e

V

GS

(

T

H

)

On-resistance vs Drain Current

ID-

Drain Current

(Amps)

RDS(on)-Drain Source On Resistance

(Ω)

-2.5V

-3V

V

GS=

-10V

I

D=

-1mA

V

GS=

V

DS

-10V

10

1

100

-0.01

-0.1 -10

V

GS

=-2V

300

µ

s Pulsed Test

-1

I

D

=0.2A

0.2

0.4

0.0

200

100

0

300

400

200

100

0

Crss

Coss

TYPICAL CHARACTERISTICS

01 45

-6

-8

-10

-14

-16

-12

-4

-2

0

Q-Gate Charge (nC)

200

150

100

0

50

250

300

-0.01 -1 -10 -100

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-Capac

ita

n

ce (

p

F

)

Note:VGS=0V

Ciss

VGS-Gate Source Voltage (Volts)

Gate charge v gate-source voltage

VDS= -20V

-50V

-100V

Note:ID=- 0.25A

32

0.0001

50

150

100

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01

D=1 (D.C.)

D=0.5

D=0.2

D=0.1

Single Pulse

0.001

0

D=0.05

Derating Curve

T

amb

- Ambient Temperature (°C)

P

tot

-Power Dissipation (mW)

0.8

150

0.6

0.4

0.2

0

100500

3-438

ZVP4424A

3-437

ZVP4424A

TYPICAL CHARACTERISTICS

0-2-4-6-8-10

-1.2

Transfer Characteristics

V

DS

=-10V

300µs Pulsed Test

I

D

-

Drain Cur

r

e

nt

(

Am

ps)

VGS - Gate Source Voltage (Volts)

-0.8

-0.6

-0.4

0

-0.2

-1.0

0 -2 -4 -6 -8 -10

-1.2

Saturation Characteristics

I

D

- Drain Curre

n

t (Amps)

V

DS

- Drain Source Voltage (Volts)

-0.8

-0.6

-0.4

0

-0.2

-1.0

300µs Pulsed Test

V

GS

=-10V

-5V

-4V

-3V

-2.5V

-2V

Transconductance v drain current

I

D

- Drain Current (Amps

)

g

fs

-Transconductance (mS)

300

0 -0.2 -0.4 -0.6 -0.8 -1.0

400

Transconductance v gate-source voltage

V

GS

-Gate Source Voltage (Volts)

g

fs

-Transconductance (mS)

0-2-4-6

300µs Pulsed Test

V

DS

=-10V

300µs Pulsed Test

V

DS

=-10V

Normalised R

DS(on)

and V

GS(th)

vs Temperature

Junction Temperature (°C)

Normalis

ed R

D

S(o

n

)

a

nd

V

G

S(th)

-50

-25 0 25 50 75

125

100 150

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drai

n

-

S

o

u

rce

Resi

s

ta

n

c

e R

DS(

o

n)

G

ate

T

h

res

h

o

l

d

Vo

l

tag

e

V

GS

(

T

H

)

On-resistance vs Drain Current

ID-

Drain Current

(Amps)

RDS(on)-Drain Source On Resistance

(Ω)

-2.5V

-3V

V

GS=

-10V

I

D=

-1mA

V

GS=

V

DS

-10V

10

1

100

-0.01

-0.1 -10

V

GS

=-2V

300

µ

s Pulsed Test

-1

I

D

=0.2A

0.2

0.4

0.0

200

100

0

300

400

200

100

0

Crss

Coss

TYPICAL CHARACTERISTICS

01 45

-6

-8

-10

-14

-16

-12

-4

-2

0

Q-Gate Charge (nC)

200

150

100

0

50

250

300

-0.01 -1 -10 -100

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-Capac

ita

n

ce (

p

F

)

Note:VGS=0V

Ciss

VGS-Gate Source Voltage (Volts)

Gate charge v gate-source voltage

VDS= -20V

-50V

-100V

Note:ID=- 0.25A

32

0.0001

50

150

100

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01

D=1 (D.C.)

D=0.5

D=0.2

D=0.1

Single Pulse

0.001

0

D=0.05

Derating Curve

T

amb

- Ambient Temperature (°C)

P

tot

-Power Dissipation (mW)

0.8

150

0.6

0.4

0.2

0

100500

3-438

ZVP4424A

3-437

ZVP4424A

ZVP4424A

ZVP4424A

Products related to this Datasheet