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NCV8402AMNT2G

P1-P3P4-P6P7-P9P10-P12P13-P13
NCV8402, NCV8402A
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter UnitMaxTypMinSymbolTest Condition
GATE INPUT CHARACTERISTICS (Note 5)
Current Limit Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GCL
0.05
mA
V
GS
= 10 V, V
DS
= 10 V
0.4
Thermal Limit Fault Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GTL
0.15
mA
V
GS
= 10 V, V
DS
= 10 V
0.7
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
V
Machine Model (MM) 400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NCV8402, NCV8402A
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
1
10
10 100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
L (mH)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
10 1
00
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
0.1
1
10
110
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
TIME IN CLAMP (ms)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
11
0
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
Figure 6. On−state Output Characteristics
0
1
2
3
4
5
1234
5
V
DS
= 10 V
25°C
100°C
150°C
−40°C
I
D
(A)
V
GS
(V)
Figure 7. Transfer Characteristics
V
DS
(V)
I
D
(A)
V
GS
= 2.5 V
3 V
4 V
5 V
6 V
8 V
10 V
T
A
= 25°C
0
1
2
3
4
5
6
7
8
012345
3.5 V
NCV8402, NCV8402A
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
0
100
200
300
400
45678910
Figure 8. R
DS(on)
vs. Gate−Source Voltage
V
GS
(V)
R
DS(on)
(mW)
150°C, I
D
= 0.5 A
150°C, I
D
= 1.7 A
100°C, I
D
= 0.5 A
100°C, I
D
= 1.7 A
25°C, I
D
= 0.5 A
25°C, I
D
= 1.7 A
−40°C, I
D
= 0.5 A
−40°C, I
D
= 1.7 A
50
100
150
200
250
300
350
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
150°C, V
GS
= 10 V
150°C, V
GS
= 5 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
Figure 9. R
DS(on)
vs. Drain Current
I
D
(A)
R
DS(on)
(mW)
0.5
0.75
1
1.25
1.5
1.75
2
−40 −20 0 20 40 60 80 100 120 140
V
GS
= 5 V
V
GS
= 10 V
I
D
= 1.7 A
Figure 10. Normalized R
DS(on)
vs. Temperature
T (°C)
R
DS(on)
(NORMIALZIZED)
2
3
4
5
6
7
8
5678910
25°C
100°C
150°C
−40°C
Figure 11. Current Limit vs. Gate−Source
Voltage
V
GS
(V)
I
LIM
(A)
V
DS
= 10 V
2
3
4
5
6
7
8
−40 −20 0 20 40 60 80 100 120 140
Figure 12. Current Limit vs. Junction
Temperature
T
J
(°C)
I
LIM
(A)
V
DS
= 10 V
V
GS
= 5 V
V
GS
= 10 V
0.0001
0.001
0.01
0.1
1
10
10 15 20 25 30 35 40
Figure 13. Drain−to−Source Leakage Current
V
DS
(V)
I
DSS
(mA)
V
GS
= 0 V
25°C
100°C
150°C
−40°C
P1-P3P4-P6P7-P9P10-P12P13-P13

NCV8402AMNT2G

Mfr. #:
Buy NCV8402AMNT2G
Manufacturer:
ON Semiconductor
Description:
IC DVR LO SIDE 42V 2.0A 6DFN
Lifecycle:
New from this manufacturer.
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