SQJA92EP
www.vishay.com
Vishay Siliconix
S16-2322-Rev. A, 14-Nov-16
1
Document Number: 75095
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 80
R
DS(on)
() at V
GS
= 10 V 0.0095
I
D
(A) 57
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
80
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
I
D
57
A
T
C
= 125 °C 33
Continuous source current (diode conduction) I
S
60
Pulsed drain current
a
I
DM
150
Single pulse avalanche current
L = 0.1 mH
I
AS
33
Single pulse avalanche energy E
AS
54 mJ
Maximum power dissipation
a
T
C
= 25 °C
P
D
68
W
T
C
= 125 °C 22
Operating junction and storage temperature range T
J
, T
stg
-55 to +175
°C
Soldering recommendations (peak temperature)
c, d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
b
R
thJA
68
°C/W
Junction-to-case (drain) R
thJC
2.2