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PBHV8515QAZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NXP Semiconductors
PBHV8515QA
150 V
, 500 mA NPN high-voltage low VCEsat (BISS) transistor
PBHV8515QA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
19 November 2015
6 / 17
aaa-007846
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, single-sided copper
, 1 cm
2
Fig. 4.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, 4-layer copper
, standard footprint
Fig. 5.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV8515QA
150 V
, 500 mA NPN high-voltage low VCEsat (BISS) transistor
PBHV8515QA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
19 November 2015
7 / 17
aaa-007849
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, 4-layer copper
, 1 cm
2
Fig. 6.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV8515QA
150 V
, 500 mA NPN high-voltage low VCEsat (BISS) transistor
PBHV8515QA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
19 November 2015
8 / 17
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
CB
= 120 V; I
E
= 0 A; T
amb
= 25 °C
-
-
100
nA
I
CBO
collector-base cut-off
current
V
CB
= 120 V; I
E
= 0 A; T
j
= 150 °C
-
-
10
µA
I
CES
collector-emitter cut-off
current
V
CE
= 120 V; V
BE
= 0 V; T
amb
= 25 °C
-
-
100
nA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
100
nA
V
CE
= 10 V; I
C
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100
215
-
V
CE
= 10 V; I
C
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100
215
-
V
CE
= 10 V; I
C
= 200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
100
200
-
h
FE
DC current gain
V
CE
= 10 V; I
C
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
35
60
-
I
C
= 50 mA; I
B
= 5 mA; T
amb
= 25 °C
-
30
60
mV
I
C
= 100 mA; I
B
= 10 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
45
80
mV
I
C
= 100 mA; I
B
= 20 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
35
70
mV
I
C
= 200 mA; I
B
= 40 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
60
100
mV
V
CEsat
collector-emitter
saturation voltage
-
120
200
mV
V
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
0.95
1.2
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
155
-
ns
t
on
turn-on time
-
170
-
ns
t
s
storage time
-
650
-
ns
t
f
fall time
-
170
-
ns
t
off
turn-off time
V
CC
= 10 V; I
C
= 100 mA; I
Bon
= 20 mA;
I
Boff
= -20 mA; T
amb
= 25 °C
-
820
-
ns
f
T
transition frequency
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
-
75
-
MHz
C
c
collector capacitance
V
CB
= 20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
2.4
-
pF
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
PBHV8515QAZ
Mfr. #:
Buy PBHV8515QAZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBHV8515QA/DFN1010D-3/REEL 7
Lifecycle:
New from this manufacturer.
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