IXA27IF1200HJ
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
43
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions
Unit
27
V
V
CE(sat)
total power dissipation
150
W
collector emitter leakage current
6.5
V
turn-on delay time
70
ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
75
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1
mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
76
nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40
ns
250
ns
100
ns
2.5
mJ
3
mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE
C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
100
A
R
thJC
thermal resistance junction to case
0.84
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
42
A
C
25T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.20
V
VJ
1.95T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
*
mA
VJ
*T = 125°C
VJ
I
R R RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
3.5
µC
30
A
350
ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
0.9
mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
1.2
K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
25
1
25
25
30
30
39
39
39
600
900
-600
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink
K/W
R
thCH
thermal resistance case to heatsink
K/W
* not applicable, see Ices value above
IGBT
Diode
600 V
V = V
CEmax
900
80
80
80
80
125
125
125
125
125
nA
0.25
0.25
IXYS reserves the right to change limits, conditions and dimensions.
20100623bData according to IEC 60747and per semiconductor unless otherwise specified
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