BCX71K,215

P1-P3 P4-P6 P7-P8

2004 Feb 16 3

NXP Semiconductors Product data sheet

PNP general purpose transistors BCX71 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − −45 V

V

CEO

collector-emitter voltage open base − −45 V

V

EBO

emitter-base voltage open collector − −5 V

I

C

collector current (DC) − −100 mA

I

CM

peak collector current − −200 mA

I

BM

peak base current − −200 mA

P

tot

total power dissipation T

amb

≤ 25 °C − 250 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient note 1 500 K/W

2004 Feb 16 4

NXP Semiconductors Product data sheet

PNP general purpose transistors BCX71 series

CHARACTERISTICS

T

amb

= 25 °C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector-base cut-off current I

E

= 0; V

CB

= −45 V − − −20 nA

I

E

= 0; V

CB

= −45 V; T

amb

= 150 °C − − −20 μA

I

EBO

emitter-base cut-off current I

C

= 0; V

EB

= −4 V − − −20 nA

h

FE

DC current gain I

C

= −10 μA; V

CE

= −5 V

BCX71H 30 − −

BCX71J 40 − −

BCX71K 100 − −

DC current gain I

C

= −2 mA; V

CE

= −5 V

BCX71H 180 − 310

BCX71J 250 − 460

BCX71K 380 − 630

DC current gain I

C

= −50 mA; V

CE

= −1 V; note 1

BCX71H 80 − −

BCX71J 100 − −

BCX71K 110 − −

V

CEsat

collector-emitter saturation

voltage

I

C

= −10 mA; I

B

= −0.25 mA −60 − −250 mV

I

C

= −50 mA; I

B

= −1.25 mA; note 1 −120 − −550 mV

V

BEsat

base-emitter saturation

voltage

I

C

= −10 mA; I

B

= −0.25 mA −600 − −850 mV

I

C

= −50 mA; I

B

= −1.25 mA; note 1 −680 − −1 050 mV

V

BE

base-emitter voltage I

C

= −2 mA; V

CE

= −5 V −600 −650 −750 mV

I

C

= −10 μA; V

CE

= −5 V − −550 − mV

I

C

= −50 mA; V

CE

= −1 V; note 1 − −720 − mV

C

c

collector capacitance I

E

= I

e

= 0; V

CB

= −10 V; f = 1 MHz − 4.5 − pF

C

e

emitter capacitance I

C

= I

c

= 0; V

EB

= −0.5 V; f = 1 MHz − 11 − pF

f

T

transition frequency I

C

= −10 mA; V

CE

= −5 V; f = 100 MHz 100 − − MHz

F noise figure I

C

= −200 μA; V

CE

= −5 V; R

S

= 2 kΩ;

f

= 1 kHz; B = 200 Hz

− 2 6 dB

2004 Feb 16 5

NXP Semiconductors Product data sheet

PNP general purpose transistors BCX71 series

PACKAGE OUTLINE

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w

M

v

M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface-mounted package; 3 leads SOT2

3

P1-P3 P4-P6 P7-P8

BCX71K,215

Mfr. #:

Manufacturer:

Nexperia

Description:

Bipolar Transistors - BJT TRANS GP TAPE-7

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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