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MIXA150W1200TEH
P1-P3
P4-P6
© 2011 IXYS All rights reser
ved
4 - 6
20110510b
MIXA150W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
150
= Current Rating [A]
W
= Six-P
ack
1200
= Rev
erse V
oltage [V]
T
= NTC
EH
= E3-P
ack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA150W1200
TEH
MIXA150W1200TEH
Bo
x
5
509654
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
9
10
11
12
5
6
7
8
1
2
3
4
NTC
19
20
16, 17, 18
13, 14, 15
27
28
29
24
25
26
21
22
23
30, 31, 32
33, 34, 35
XXX XX-XXX
XX
YYCWx
Part name
Date Code
Logo
Prod.Index
2D Data Matrix
FOSS-ID 6 digits
© 2011 IXYS All rights reser
ved
5 - 6
20110510b
MIXA150W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
T
ransistor
T1 -
T6
0
1
2
3
0
50
100
150
200
250
300
0
50
100
150
200
25
0
300
0
5
10
15
20
25
30
35
0
1
2
3
4
0
50
100
150
200
250
300
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
50
100
150
200
250
300
0
100
200
300
400
5
00
600
0
5
10
15
20
T
VJ
= 125°C
13 V
0
2
4
6
8
10
12
14
1
6
10
12
14
16
18
20
22
E
[mJ]
E
off
Fig. 1 Typ. output characteristi
cs
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteri
stics
I
C
[A]
Fig. 3 Typ. tranfer characteristic
s
V
GE
[V]
Fig. 4 Typ. turn-on gate
charge
Fig. 5 Typ. sw
itching energy vs. coll
ector current
E
on
Fig. 6 Typ. sw
itching energy
vs. gate resista
nce
R
G
[
Ω
]
E
[mJ]
I
C
[A]
V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 150 A
V
CE
= 600 V
R
G
= 4.7
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 150 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
E
rec
© 2011 IXYS All rights reser
ved
6 - 6
20110510b
MIXA150W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
I
C
[A]
Fig.7 Typical
forward cha
racteristics
V
CE
[V]
T
VJ
= 25°C
T
VJ
= 125°C
R
[
Ω
]
Fig. 10 Typ. NTC resistan
ce vs. temperature
T
C
[°C]
Fig. 9 Typ. transient th
ermal impedance
0.001
0.01
0.1
1
10
0.01
0.1
1
Z
thJC
[K/W]
IGBT
Diode
t
[s]
1600
1800
2000
2200
2400
2600
6
7
8
9
10
11
0
25
5
0
75
100
125
150
10
100
1000
10000
100000
di
F
/dt
[A/µs]
Fig. 8 Typ. recovery ene
rgy E
rec
versus di
F
/dt
E
rec
[mJ]
T
VJ
= 125°C
V
R
= 600 V
27
Ω
15
Ω
4.7
Ω
In
ver
ter D1 - D6
In
ver
ter
T
ransistor & Diode
NTC
IGBT
FRD
R
i
t
i
R
i
t
i
0.027
0.002
0.054
0.002
0.028
0.03
0.05
0.03
0.06
0.03
0.096
0.03
0.065
0.08
0.08
0.08
P1-P3
P4-P6
MIXA150W1200TEH
Mfr. #:
Buy MIXA150W1200TEH
Manufacturer:
Littelfuse
Description:
IGBT Modules Six Pack SPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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