WeEn Semiconductors
TYN60K-1400T
SCR
TYN60K-1400T All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 17 January 2017 7 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7;
Fig. 8
- - 80 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 9 - 155 300 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 10 - 115 200 mA
I
T
= 60 A; T
j
= 25 °C; Fig. 11 - 1.35 VV
T
on-state voltage
I
T
= 120 A; T
j
= 25 °C; Fig. 11 - 1.65 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 12
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 800 V; I
T
= 0.1 A; T
j
= 150 °C;
Fig. 12
0.2 0.45 - V
I
D
off-state current V
D
= 1400 V; T
j
= 150 °C - 5 10 mA
I
R
reverse current V
R
= 1400 V; T
j
= 150 °C - 3 10 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 938 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1500 - - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 938 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 50 V/µs; R
GK(ext)
= 100 kΩ; (V
DM
=
67% of V
DRM
)
- 150 - µs
-50 0 50 100 150
0
1
2
3
T
j
(°C)
I
GT
I
GT(25°C)
aaf121-007
Fig. 7. Normalized gate trigger current as a function of
junction temperature
aaf121-004
1
10
V
G
(V)
0.1
I
G
(A)
0.001 1000100100.01 10.1
d
c
b
a
(4)
(3)
(2)
a: Tj = 150°C
b: Tj = 125°C
c: Tj = 25°C
d: Tj = -40°C
(1): PGM = 10W, tp = 5ms
(2): PGM = 20W, tp = 2.5ms
(3): PGM = 50W, tp = 1ms
(4): PGM = 100W, tp = 500us
(1)
Fig. 8. Gate voltage as a function of gate current
-
-
