Characteristics STTH30L06
4/10
Figure 7. Reverse recovery softness factor
versus dI
F
/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 50 100 150 200 250 300 350 400 450 500
S factor
I < 2 x I
T =125°C
F F(AV)
j
V =400V
R
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125
I
RM
Q
RR
t
rr
S factor
T (°C)
j
I=I
Reference: T =125°C
F F(AV)
j
V =400V
R
Figure 9. Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450 500
V (V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
0
50
100
150
200
250
300
350
400
450
500
0 100 200 300 400 500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
V =1.1 x V max.
FR F
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (epoxy FR4, e
CU
=35µm)
(D
2
PAK)
10
100
1000
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
S (cm²)
CU
