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IXFR200N10P

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFR200N10P
Fig. 7. Input Admittance
0
50
100
150
200
250
300
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300 350
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 100A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
10ms
DC
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_200N10P (88) 2-08-17
IXFR200N10P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P5

IXFR200N10P

Mfr. #:
Buy IXFR200N10P
Manufacturer:
Littelfuse
Description:
MOSFET 133 Amps 100V 0.0075 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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