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IRSF3011L

P1-P3P4-P6P7-P9P10-P12P13-P13
Features
· Extremely rugged for harsh operating environments
· Over-temperature protection
· Over-current protection
· Active drain-to-source clamp
· ESD protection
· Lead compatible with standard Power MOSFET
· Low operating input current
· Monolithic construction
IRSF3011 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60133-H
Applications
· Solenoid Driver
· DC Motor Driver
Description
The IRSF3011 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD
and over-voltage protections.
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 7A (typical) or the junction
temperature exceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage is actively
clamped at 55V (typical), prior to the avalanche of Power
MOSFET, thus improving its performance during turn-off with
inductive loads.
The input current requirements are very low (300µA) which
makes the IRSF3011 compatible with most existing designs
based on standard Power MOSFETs.
Available Packages
3 Lead
TO220AB
3 Lead
SOT223
Block Diagram
INPUT
DRAIN
SOURCE
V
ds(clamp)
50V
R
ds(on)
200mW
I
ds(sd)
7A
T
j(sd)
165
o
C
E
AS
200mJ
Product Summary
1www.irf.com
IRSF3011
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain to source clamp voltage 50 54 —
V
I
ds
= 10mA
—5662 I
ds
= 6A, t
p
= 700 ms
R
ds(on)
Drain to source on resistance — 155 200 V
in
= 5V, I
ds
= 2A
— 200 — mW V
in
= 4V, I
ds
= 2A
— 115 — V
in
= 10V, I
ds
= 2A
I
dss
Drain to source leakage current — — 10 V
ds
= 12V, V
in
= 0V
— — 100 mAV
ds
= 50V, V
in
= 0V
— 10 250
V
th
Input threshold voltage 1.5 2.0 2.5 V V
ds
= 5V, I
ds
= 10mA
I
i,on
Input supply current (normal operation) — 0.25 0.6 V
in
= 5V
— 0.35 0.85
mA
V
in
= 10V
I
i, off
Input supply current (protection mode) — 0.5 1.0 V
in
= 5V
— 0.6 1.2 V
in
= 10V
V
in, clamp
Input clamp voltage 10 10.8 —
V
I
in
= 10mA
V
sd
Body-drain diode forward drop➂ — 1.2 1.5 I
ds
= -9A, R
in
= 1kW
Static Electrical Characteristics
(T
C
= 25
o
C unless otherwise specified.)
V
ds
=40V,V
in
=0V,T
c
=150
o
C
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(T
C
= 25
o
C unless otherwise specified.)
Symbol Parameter Min. Max. Units Test Conditions
V
ds,
max
Continuous drain to source voltage — 50
V
V
in,
max
Continuous input voltage -0.3 10
I
ds
Continuous drain current — self limited A
P
d
Power dissipation — 30 T
c
£ 25
o
C, TO220
—3 T
c
£ 25
o
C, SOT223
E
AS
Unclamped single pulse inductive energyÁ — 200 mJ
V
esd1
Electrostatic discharge voltage (Human Body Model) — 4000
V
100pF, 1.5kW
V
esd2
Electrostatic discharge voltage (Machine Model) — 1000 200pF, 0W
T
Jop
Operating junction temperature range -55
150
T
Stg
Storage temperature range -55 150
o
C
T
L
Lead temperature (soldering, 10 seconds) — 300
W
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth
jc
Junction to case — — 4
TO-220AB
Rth
ja
Junction to ambient — — 60
Rth
jc
Junction to case — — 40
SOT-223
Rth
ja
Junction to PCB ➀ ——60
Thermal Characteristics
o
C/W
IRSF3011
3www.irf.com
NOTES:
①
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
② E
AS
is tested with a constant current source of 6A applied for 700mS with V
in
= 0V and starting T
j
= 25
o
C.
③ Input current must be limited to less than 5mA with a 1kW resistor in series with the input when the Body-Drain Diode
is forward biased.
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 5W , T
C
= 25°C.) Please refer to figure 3 for switching time definitions.
Symbol Parameter Min. Typ. Max. Units Test Conditions
t
don
Turn-on delay time — 160 250 V
in
= 5V
—90— V
in
= 10V
t
r
Rise time — 650 1200 V
in
= 5V
— 250 —
nS
V
in
= 10V
t
doff
Turn-off delay time — 250 350 V
in
= 5V
— 300 — V
in
= 10V
t
f
Fall time — 180 350 V
in
= 5V
— 170 — V
in
= 10V
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
ds(sd)
Over-current shutdown threshold 5 7 10 A V
in
= 5V
T
j(sd)
Over temperature shutdown threshold 155 165 —
o
CV
in
= 5V, I
ds
= 2A
V
protect
Min. input voltage for over-temp function — 3 — V
t
Iresp
Over current response time — 4 —
mS
See Figure 4 for definition
t
Iblank
Over current blanking time — 4 — See Figure 4 for definition
I
peak
Peak short circuit current — 16 — A See Figure 4 for definition
V
reset
Protection reset voltage — 1.3 — V
t
reset
Protection reset time — 8 —
mS
See Figure 5 for definition
t
Tresp
Over-temperature response time — 12 — See Figure 6 for definition
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.)
Symbol Parameter Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain-to-source clamp voltage T.C. — 18.2 — I
ds
= 10mA
V
th
Input threshold voltage T.C. — -2.7 — mV/
o
CV
ds
= 5V, I
ds
= 10mA
V
in,clamp
Input clamp voltage T.C. — 7.0 — I
in
= 10mA
I
ds(sd)
Over-current shutdown threshold T.C. — -9.8 — mA/
o
CV
in
= 5V
Temperature Coefficients of Electrical Characteristics
(Please see Figures 7 through 18 for more data on thermal characteristics of other electrical parameters.
P1-P3P4-P6P7-P9P10-P12P13-P13

IRSF3011L

Mfr. #:
Buy IRSF3011L
Manufacturer:
Infineon Technologies
Description:
IC DRIVER LO SIDE 50V 5A SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
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