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TSM3446CX6 RFG

P1-P3P4-P6
TSM3446
20V N-Channel MOSFET
Document Number:
DS_P0000078 1
Version: E15
SOT
-
26
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM3446CX6 RFG
SOT-26 3Kpcs / 7” Reel
TSM3446CX6 RKG
SOT-26 10Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
5.3 A
Pulsed Drain Current, V
GS
@4.5V I
DM
20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
2.0
W
Ta = 70
o
C 1.3
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
80 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
(V) R
DS(on)
(mΩ) I
D
(A)
20
33 @ V
GS
= 4.5V 5.3
40 @ V
GS
= 2.5V 4.4
Pin
Definition
:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
Block Diagram
N-Channel MOSFET
TSM3446
20V N-Channel MOSFET
Document Number:
DS_P0000078 2
Version: E15
Electrical Specifications
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
0.5 0.7 1.0 V
Gate Body Leakage V
GS
= ±10V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 16, V
GS
= 0V I
DSS
-- -- 1.0 uA
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 5.3A
R
DS(ON)
-- 27 33
mΩ
V
GS
= 2.5V, I
D
= 4.4A -- 33 40
Forward Transconductance V
DS
= 10V, I
D
= 5.3A g
fs
-- 20 -- S
Diode Forward Voltage I
S
= 1A, V
GS
= 0V V
SD
-- 0.7 1.3 V
Dynamic
b
Total Gate Charge
V
DS
= 10V, I
D
= 5.3A,
V
GS
= 4.5V
Q
g
-- 12.5 --
nC
Gate-Source Charge Q
gs
-- 0.72 --
Gate-Drain Charge Q
gd
-- 4.3 --
Input Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 700 --
pF
Output Capacitance C
oss
-- 125 --
Reverse Transfer Capacitance C
rss
-- 110 --
Switching
c
Turn-On Delay Time
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
t
d(on)
-- 4.6 --
nS
Turn-On Rise Time t
r
-- 14 --
Turn-Off Delay Time t
d(off)
-- 30 --
Turn-Off Fall Time t
f
-- 5 --
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM3446
20V N-Channel MOSFET
Document Number:
DS_P0000078 3
Version: E15
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
P1-P3P4-P6

TSM3446CX6 RFG

Mfr. #:
Buy TSM3446CX6 RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V N channel Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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