2002 Jan 11 3
NXP Semiconductors Product data sheet
Schottky barrier diode 1PS79SB31
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage see Fig.2;
I
F
= 0.1 mA 130 190 mV
I
F
= 1 mA 190 250 mV
I
F
= 10 mA 255 300 mV
I
F
= 100 mA 355 410 mV
I
F
= 200 mA 420 500 mV
I
R
continuous reverse current V
R
= 10 V; note 1; see Fig.3 2.5 30 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; see Fig.4 20 25 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 450 K/W