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IXTA02N450HV

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
DS100498(10/12)
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Features
z
High Blocking Voltage
z
High Voltage Packages
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
High Voltage Power Supplies
z
Capacitor Discharge Applications
z
Pulse Circuits
z
Laser and X-Ray Generation Systems
IXTA02N450HV
IXTT02N450HV
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 4500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 4500 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 200 mA
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
600 mA
P
D
T
C
= 25°C 113 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
F
C
Mounting Force (TO-263) 10..65 / 22..14.6 N/lb
Weight TO-263 2.5 g
TO-268 4.0 g
V
DSS
= 4500V
I
D25
= 200mA
R
DS(on)
≤ ≤
≤ ≤
≤
750
ΩΩ
ΩΩ
Ω
Advance Technical Information
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 4.0 6.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= 3.6kV, V
GS
= 0V 5 μA
V
DS
= 4.5kV 10 μA
V
DS
= 3.6kV T
J
= 100°C 25 μA
R
DS(on)
V
GS
= 10V, I
D
= 10mA, Note 1 750 Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-268 (IXTT)
G
D (Tab)
G
S
TO-263 (IXTA)
D (Tab)
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA02N450HV
IXTT02N450HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 60V, I
D
= 30mA, Note 1 60 100 mS
C
iss
256 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 19 pF
C
rss
5.5 pF
R
Gi
Gate Input Resistance 76 Ω
t
d(on)
17 ns
t
r
48 ns
t
d(off)
28 ns
t
f
143 ns
Q
g(on)
10.4 nC
Q
gs
V
GS
= 10V, V
DS
= 1kV, I
D
= 0.5 • I
D25
3.4 nC
Q
gd
5.0 nC
R
thJC
1.1 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 mA
I
SM
Repetitive, Pulse Width Limited by T
JM
800 mA
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
I
F
= 200mA, -di/dt = 50A/μs, V
R
= 100V 1.6 μs
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Resistive Switching Times
V
GS
= 10V, V
DS
= 500V, I
D
= 0.5 • I
D25
R
G
= 10Ω (External)
TO-263 (VHV) Outline
TO-268 (VHV) Outline
PIN: 1 - Gate
2 - Source
3 - Drain
PIN:
1 - Gate
2 - Source
3 - Drain
© 2012 IXYS CORPORATION, All Rights Reserved
IXTA02N450HV
IXTT02N450HV
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300 350 400
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
9V
8V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
140
160
180
200
0 50 100 150 200 250 300 350
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 100mA
I
D
= 200mA
Fig. 5. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 50 100 150 200 250 300 350
I
D
- MilliAmperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
160
180
200
220
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- MilliAmperes
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
9V
8V
7V
6V
P1-P3P4-P5

IXTA02N450HV

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MOSFET N-CH 4500V 0.2A TO263
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