NP32N055SLE-E1-AY

Data Sheet D14137EJ5V0DS
5
NP32N055HLE,NP32N055ILE,NP32N055SLE
T
ch
- Channel Temperature - ˚C
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - m
50
0
0
10
20
30
40
50
60
50
100 150
V
GS
= 4.5 V
I
D
= 16 A
5.0 V
10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
V
SD
- Source to Drain Voltage - V
Pulsed
V
GS
= 0 V
V
GS
= 10 V
0.1
1
10
100
1000
0 0.5 1.0 1.5
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
Figure15. SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
10.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
10
1.0 10 100
1000
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
81241620242832
20
40
60
80
2
4
6
8
10
12
14
16
V
DS
V
GS
V
DD
= 44 V
I
D
= 32 A
28 V
11 V
Data Sheet D14137EJ5V0DS
6
NP32N055HLE,NP32N055ILE,NP32N055SLE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
2) TO-252 (JEITA) / MP-3Z
5.0±0.2
2.3±0.2
0.5±0.1
1.1±0.2
6.5±0.2
2.3 TYP. 2.3 TYP.
5.5±0.2
1.6±0.2
7.0 MIN.0.75 TYP.
13.7 MIN.
1.5
+0.2
0.1
0.5
+0.2
0.1
0.5
+0.2
0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
4
NOTFORNEWDESIGN
5.0±0.2
0.5±0.1
1.1±0.2 0.9 MAX. 0.8 MAX.
0.8 TYP.
2.3 TYP. 2.3 TYP.
6.5±0.2
2.3±0.2
4.3 MAX.0.8 TYP.
2.0
MIN.
1.0 MIN.
1.8 TYP.
1.5
+0.2
0.1
10.0 MAX.
0.7 TYP.
5.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
4
3) TO-252 (JEDEC) / MP-3ZK
6.5±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0 to 0.25
0.5±0.1
1.0
No Plating
No Plating
5.1 TYP.
1.0 TYP.6.1±0.2
0.51 MIN.
4.0 MIN.0.8
10.4 MAX. (9.8 TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
NP32N055HLE,NP32N055ILE,NP32N055SLE
The information in this document is current as of July, 2005. The information is subject to change
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"Specific":

NP32N055SLE-E1-AY

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
MOSFET 1P-3ZK PoTr-MOSFET Low
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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