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DMHC3025LSD-13

P1-P3P4-P6P7-P9
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
1 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PRODUCT
ADVANCE INFORMATION
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
N-Channel 30V
25m @ V
GS
= 10V
6.0
40m @ V
GS
= 4.5V
4.6
P-Channel -30V
50m @ V
GS
= -10V
-4.2
80m @ V
GS
= -4.5V
-3.2
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
DC Motor control
DC-AC Inverters
Features
2 x N + 2 x P channels in a SOIC package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMHC3025LSD-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Internal Schematic
Top View
Pin Configuration
SO-8
H-Bridge
P1G
P1S/P2S
N2D/P2D
P2G N2G
N1S/N2S
N1D/P1D
N1G
1
4
8
5
C
3
0
2
5
L
S
Y
Y W
W
= Manufacturer’s Marking
C3025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
2 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PRODUCT
ADVANCE INFORMATION
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
83
°C/W
t < 10s 50
Thermal Resistance, Junction to Case
R
JC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Maximum Ratings N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
6.0
4.8
A
t < 10s
T
A
= +25C
T
A
= +70C
I
D
7.8
6.1
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
4.6
3.6
A
t < 10s
T
A
= +25C
T
A
= +70C
I
D
6.1
4.8
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
2.5 A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
60 A
Maximum Ratings P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
-4.2
-3.3
A
t < 10s
T
A
= +25C
T
A
= +70C
I
D
-5.4
-4.3
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
-3.2
-2.5
A
t < 10s
T
A
= +25C
T
A
= +70C
I
D
-4.3
-3.3
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-2.5
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
-30 A
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
3 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PRODUCT
ADVANCE INFORMATION
Electrical Characteristics N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
— —
0.5 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±1 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
th
1 — 2 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
19 25
m
V
GS
= 10V, I
D
= 5A
—
26 40
V
GS
= 4.5V, I
D
= 4A
Forward Transfer Admittance
|Y
fs
|
—
4 — S
V
DS
= 5V, I
D
= 5A
Diode Forward Voltage
V
SD
—
0.70 1.2 V
V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
590
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
122
—
Reverse Transfer Capacitance
C
rss
—
58
—
Gate resistance
R
g
—
1.5
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
5.4
—
nC
V
DS
= 15V, I
D
= 7.8A
Total Gate Charge (V
GS
= 10V) Q
g
—
11.7
—
Gate-Source Charge
Q
g
s
—
1.8
—
Gate-Drain Charge
Q
g
d
—
2.1
—
Turn-On Delay Time
t
D
(
on
)
—
11.2
—
ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 2.4, R
G
= 1,
Turn-On Rise Time
t
r
—
15
—
Turn-Off Delay Time
t
D
(
off
)
—
17.5
—
Turn-Off Fall Time
t
f
—
8.7
—
Reverse Recovery Time
t
r
r
—
18.3
—
ns
I
F
= 12A, di/dt = 500A/s
Reverse Recovery Charge
Q
r
r
—
12
—
nC
Electrical Characteristics P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30
— —
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
— —
-0.5 A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±1 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
th
-1 — -2 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
43 50
m
V
GS
= -10V, I
D
= -5A
—
68 80
V
GS
= -4.5V, I
D
= -4A
Forward Transfer Admittance
|Y
fs
|
—
3.5 — S
V
DS
= -5V, I
D
= -5A
Diode Forward Voltage
V
SD
—
-0.7 -1.2 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
631
—
pF
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
137
—
pF
Reverse Transfer Capacitance
C
rss
—
70
—
pF
Gate resistance
R
g
—
10.8
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
5.5
—
nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V
GS
= 10V) Q
g
—
11.4
—
nC
Gate-Source Charge
Q
g
s
—
1.8
—
nC
Gate-Drain Charge
Q
g
d
—
2.4
—
nC
Turn-On Delay Time
t
D
(
on
)
—
7.5
—
ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6, I
D
= -1A
Turn-On Rise Time
t
r
—
4.9
—
ns
Turn-Off Delay Time
t
D
(
off
)
—
28.2
—
ns
Turn-Off Fall Time
t
f
—
13.5
—
ns
Reverse Recovery Time
t
r
r
—
15.1
—
ns
I
F
= 12A, di/dt = 500A/s
Reverse Recovery Charge
Q
r
r
—
15.3
—
nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMHC3025LSD-13

Mfr. #:
Buy DMHC3025LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
Lifecycle:
New from this manufacturer.
Delivery:
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