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MMSZ5242B RHG
P1-P3
P4-P6
P7-P7
MMSZ5221B - M
MSZ5263B
Taiwan Semiconductor
4
Version: F1804
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwis
e noted)
Fig.1 T
ypical Forw
ard Voltage
Fig.
2 Zener Breakdo
wn Characteristics
Fig.
3 Zener Brea
kdown Characteristics
Fig.4 Admissible Di
ssipation VS.
Ambient Temperat
ure
1
10
100
1000
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
A
=25
o
C
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
11
12
T
A
=25
o
C
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
T
A
=25
o
C
0
100
200
300
400
500
600
700
0
50
100
150
200
Zener Curre
nt (mA)
Forward Voltage (
V)
Zener Curre
nt (mA)
Zener Voltage (V)
Power Dissipation (mW)
Ambient Tempera
ture (
o
C)
Zener Voltage (V)
Forward Cur
rent (mA)
MMSZ5221B - M
MSZ5263B
Taiwan Semiconductor
5
Version: F1804
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwis
e noted)
Fig.5
Typical Cap
acitance
Fig.6
Effect of Zene
r Voltage on Impeden
ce
1
10
100
1000
1
10
100
T
A
=25
o
C
1V Bias
Bias at 50%
of V
Z
(Nom)
1
10
100
1000
1
10
100
I
Z
=5mA
I
Z
=20mA
I
Z
=1mA
Dynamic Impedence(Oh
m)
Zener Voltage (V)
Zener Voltage (V)
Capacitance (pF)
MMSZ5221B - M
MSZ5263B
Taiwan Semiconductor
6
Version: F1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-123F
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
1.50
1.70
0.059
0.067
B
3.30
3.90
0.130
0.154
C
0.50
0.70
0.020
0.028
D
2.50
2.70
0.098
0.106
E
0.80
1.15
0.031
0.045
F
0.05
0.20
0.002
0.008
DIM.
Unit (mm)
Unit (inch)
Typ.
Typ.
C
2.86
0.113
G
1.52
0.060
X
1.34
0.053
X1
4.20
0.165
Y
1.80
0.071
P1-P3
P4-P6
P7-P7
MMSZ5242B RHG
Mfr. #:
Buy MMSZ5242B RHG
Manufacturer:
Taiwan Semiconductor
Description:
Zener Diodes Zener 500mW 5% 12V
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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