RJK2075DPA Preliminary
R07DS0856EJ0200 Rev.2.00 Page 2 of 6
Jan 10, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
200 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 AV
DS
= 200 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±1 AV
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
2.5 — 4.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 0.054 0.069 I
D
= 10 A, V
GS
= 10 V
Note5
Input capacitance Ciss — 2200 — pF
Output capacitance Coss — 200 — pF
Reverse transfer capacitance Crss — 75 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 24 — ns
Rise time t
r
— 33 — ns
Turn-off delay time t
d(off)
— 49 — ns
Fall time t
f
— 34 — ns
I
D
= 10 A
V
GS
= 10 V
R
L
= 10
Rg = 10
Total gate charge Qg — 38 — nC
Gate to source charge Qgs — 11.5 — nC
Gate to drain charge Qgd — 13 — nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 20 A
Body-drain diode forward voltage V
DF
— 0.81 1.40 V I
F
= 20 A, V
GS
= 0
Note5
Body-drain diode reverse recovery time trr — 95 — ns
IF = 20 A, V
GS
= 0
di
F
/dt = 100 A/s
Notes: 5. Pulse test
