DMP3068L-13 Datasheet DMP3068L-7, DMP3068L-13 | P1-P3

DMP3068L

Document number: DS37536 Rev. 2 - 2

1 of 6

www.diodes.com

January 2015

DMP30

68L

ADVANCED I NF O R M A T I O N

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Ordering Information

(Note 4)

Part Number

Case

Packaging

DMP3068L-7 SOT23 3,000/Tape & Reel

DMP3068L-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

SOT23

Date Code Key

Year

2014

2015

2016

2017

201

8

201

9

20

Code

B C D E F G H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 2 3 4 5 6 7 8 9 O N D

Product Summary

V

(BR)DS

S

R

DS(ON) max

Package

I

D max

T

A

= +25°C

-30V

72mΩ @ V

GS

= -10V

SOT-23

-3.9A

85mΩ @ V

GS

= -4.5V

-3.6A

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high-efficiency power management

applications.

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42

Leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (Approximate)

SOT23

Top View

D

G

S

Top View

Pin Configuration

68 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: B = 2014)

M or M = Month (ex: 9 = September)

68

Equivalent Circuit

D

S

G

DMP3068L

Document number: DS37536 Rev. 2 - 2

2 of 6

www.diodes.com

January 2015

DMP30

68L

ADVANCED I NF O R M A T I O N

Maximum Ratings

(@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 6) Vgs= -10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.3

-2.6

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

-3.9

-3.2

A

Pulsed Drain Current (

Pulse width ≤10µS, Duty Cycle ≤1%

)

I

DM

-18 A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

0.7 W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θ

JA

182

°C/W

t<10s 133

Total Power Dissipation (Note 6)

P

D

1.2 W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R

θ

JA

103

°C/W

t<10s 75

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics

(@T

A

= +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note

7

)

Drain-Source Breakdown Voltage

BV

DSS

-30

 

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

 

-1 µA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

  ±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note

7

)

Gate Threshold Voltage

V

GS(th)

-0.5



-1.3 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)



57

64

80

107

72

85

120

165

mΩ

V

GS

= -10V, I

D

= -4.2A

V

GS

= -4.5V, I

D

= -4.0A

V

GS

= -2.5V, I

D

= -2.0A

V

GS

= -1.8V, I

D

= -1.0A

Diode Forward Voltage

V

SD

 

-1.2 V

V

GS

= 0V, I

S

= -1.0A

DYNAMIC CHARACTERISTICS

(Note

8

)

Input Capacitance

C

iss



708



pF

V

DS

= -15V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss



57



pF

Reverse Transfer Capacitance

C

rss



47



pF

Gate Resistance

R

G



14



Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= -4.5V)

Q

G



7.3



nC

V

DS

= -15V, I

D

= -4A

Total Gate Charge (V

GS

= -10V) Q

G



15.9



nC

V

DS

= -15V, I

D

= -4A

Gate-Source Charge

Q

GS



1.2



Gate-Drain Charge

Q

GD



1.7



Turn-On Delay Time

t

d(on)



3.5



ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -4A, R

G

= 6.0Ω

Rise Time

t

r



15.8



Turn-Off Delay Time

t

d(off)



70.3



Fall Time

t

f



33.9



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMP3068L

Document number: DS37536 Rev. 2 - 2

3 of 6

www.diodes.com

January 2015

DMP30

68L

ADVANCED I NF O R M A T I O N

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

2

4

6

8

10

12

14

16

18

20

0

1 2 3 4 5

V = -10V

GS

V = -1.5V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -3.5V

GS

V = -4.0V

GS

V = -4.5V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3 3.5 4

V = -5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

0.05

0.1

0.15

0 4 8 12 16 20

V = -2.5V

GS

V = -4.5V

GS

V = -10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

0.05

0.1

0.15

0.2

0.25

0 2 4 6 8 10 12

I = -4.2A

D

I = -2.0A

D

I , DRAIN SOURCE CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

0

0.05

0.1

0.15

0 5 10 15 20

V = -10V

GS

T = 85°C

A

T = 125°C

A

T = 150°C

A

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

D S(ON )

ON-RES ISTANCE (NO RMALIZED)

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

V = -2.5V

GS

I = -2.0A

D

V = -4.5V

GS

I = -4.0A

D

DMP3068L-13

DMP3068L-13

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