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ESD9C3.3ST5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
November, 2017 − Rev. 4
1 Publication Order Number:
ESD9C3.3S/D
ESD9C3.3ST5G SERIES
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD9C3.3ST5G Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage, and
fast response time make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its small size, it is suited
for use in cellular phones, portable devices, digital cameras, power
supplies and many other portable applications.
Specification Features:
• Low Capacitance 6.2 pF − 13 pF
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.039″ x 0.024″ (1.0 mm x 0.60 mm)
• Low Body Height: 0.016″ (0.40 mm) Max
• Stand−off Voltage: 3.3 V, 5 V
• Low Leakage
• Response Time < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000−4−2 Level 4 ESD Protection
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±8.0
±15
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
⎪P
D
150
mW
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
†
ORDERING INFORMATION
ESD9CxxST5G SOD−923
(Pb−Free)
8000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−923
CASE 514AB
X = Specific Device Code
M = Date Code
12
PIN 1. CATHODE
2. ANODE
X M
ESD9C3.3ST5G SERIES
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
P
pk
Peak Power Dissipation
C Max. Capacitance @V
R
= 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 1.1 V Max. @ I
F
= 10 mA)
Device
Device
Marking
V
RWM
(V)
I
R
(mA)
@ V
RWM
V
BR
(V) @ I
T
(Note 2)
I
T
C (pF)
(Note 3)
C (pF)
(Note 3)
V
C
Max Max Min mA Typ Max Per IEC61000−4−2 (Note 4)
ESD9C3.3ST5G R 3.3 1.0 5.0 1.0 12.8 13
Figures 1 and 2
See Below
(Note 5)
ESD9C5.0ST5G P 5.0 0.5 11.0 1.0 6.0 6.2
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
3. Capacitance at f = 1 MHz, V
R
= 0 V, T
A
= 25°C.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD9C5.0ST5G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
ESD9C3.3ST5G SERIES
www.onsemi.com
3
IEC 61000−4−2 Spec.
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
I
peak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Figure 4. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test
Oscilloscope
ESD Gun
50 W
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
P1-P3P4-P4

ESD9C3.3ST5G

Mfr. #:
Buy ESD9C3.3ST5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ESD PROTECT DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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