M48Z35, M48Z35Y Description
Doc ID 2608 Rev 10 7/24
Figure 4. Block diagram
AI01619B
LITHIUM
CELL
V
PFD
V
CC
V
SS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
32K x 8
SRAM ARRAY
A0-A14
DQ0-DQ7
E
W
G
POWER
Operating modes M48Z35, M48Z35Y
8/24 Doc ID 2608 Rev 10
2 Operating modes
The M48Z35/Y also has its own power-fail detect circuit. The control circuitry constantly
monitors the single 5 V supply for an out of tolerance condition. When V
CC
is out of
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
CC
. As V
CC
falls below
approximately 3 V, the control circuitry connects the battery which maintains data until valid
power returns.
Table 2. Operating modes
Note: X = V
IH
or V
IL
; V
SO
= Battery backup switchover voltage.
2.1 READ mode
The M48Z35/Y is in the READ mode whenever W (WRITE enable) is high, E (chip enable) is
low. The device architecture allows ripple-through access of data from eight of 264,144
locations in the static storage array. Thus, the unique address specified by the 15 address
inputs defines which one of the 32,768 bytes of data is to be accessed. Valid data will be
available at the data I/O pins within address access time (t
AVQV
) after the last address input
signal is stable, providing that the E
and G access times are also satisfied. If the E and G
access times are not met, valid data will be available after the latter of the chip enable
access time (t
ELQV
) or output enable access time (t
GLQV
).
The state of the eight three-state data I/O signals is controlled by E
and G. If the outputs are
activated before t
AVQV
, the data lines will be driven to an indeterminate state until t
AVQV
. If
the address inputs are changed while E
and G remain active, output data will remain valid
for output data hold time (t
AXQX
) but will go indeterminate until the next address access.
Mode V
CC
E G W DQ0-DQ7 Power
Deselect
4.75 to 5.5 V
or
4.5 to 5.5 V
V
IH
X X High Z Standby
WRITE V
IL
XV
IL
D
IN
Active
READ V
IL
V
IL
V
IH
D
OUT
Active
READ V
IL
V
IH
V
IH
High Z Active
Deselect V
SO
to V
PFD
(min)
(1)
1. See Table 6 on page 12 for details.
X X X High Z CMOS standby
Deselect V
SO
(1)
X X X High Z Battery backup mode
M48Z35, M48Z35Y Operating modes
Doc ID 2608 Rev 10 9/24
Figure 5. READ mode AC waveforms
Note: WRITE enable (W
) = High.
Table 3. READ mode AC characteristics
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted).
M48Z35/Y
Unit–70
Min Max
t
AVAV
READ cycle time 70 ns
t
AVQV
(2)
2. C
L
= 100 pF.
Address valid to output valid 70 ns
t
ELQV
(2)
Chip enable low to output valid 70 ns
t
GLQV
(2)
Output enable low to output valid 35 ns
t
ELQX
(3)
3. C
L
= 5 pF.
Chip enable low to output transition 5 ns
t
GLQX
(3)
Output enable low to output transition 5 ns
t
EHQZ
(3)
Chip enable high to output Hi-Z 25 ns
t
GHQZ
(3)
Output enable high to output Hi-Z 25 ns
t
AXQX
(2)
Address transition to output transition 10 ns
AI00925
tAVAV
tAVQV tAXQX
tELQV
tELQX
tEHQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A14
E
G
DQ0-DQ7
VALID

M48Z35Y-70MH1F

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NVRAM 256K (32Kx8) 70ns
Lifecycle:
New from this manufacturer.
Delivery:
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