CMS16
2013-11-01
1
TOSHIBA Schottky Barrier Diode
CMS16
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
DC-DC Converter Applications
• Forward voltage: V
FM
= 0.55 V (max) (@I
FM
= 3.0 A)
• Average forward current: I
F (AV)
= 3.0 A
• Repetitive peak reverse voltage: V
RRM
= 40 V
• Suitable for compact assembly due to a small surface-mount package:
“M−FLAT
TM
” (Toshiba package name)”
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
40 V
Average forward current I
F (AV)
3.0 (Note 1) A
Nonrepetitive peak surge current I
FSM
30 (50 Hz) A
Junction temperature T
j
−40 to 150 °C
Storage temperature range T
stg
−40 to 150 °C
Note : Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Tℓ = 106°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
Board thickness: 0.64 mm
Rectangular waveform (α = 180°), V
R
= 20 V
Unit: mm
① ANODE
② CATHODE
0.16
0.65 ± 0.2
0.65 ± 0.2
4.7 ± 0.2
3.8 ± 0.1
0 ~ 0.1
0.98 ± 0.1
1.75 ± 0.1
+ 0.2
− 0.1 2.4
①
②
JEDEC ⎯
JEITA ⎯
TOSHIBA 3-4E1A
Weight: 0.023 g (typ.)
Start of commercial production
2003-12
