2N3634

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0156 Rev. 2 (101452) Page 1 of 5
DEVICES LEVELS
2N3634 2N3635 2N3636 2N3637 JAN
2N3634L 2N3635L 2N3636L 2N3637L JANTX
2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage V
CEO
140 175 Vdc
Collector-Base Voltage V
CBO
140 175 Vdc
Emitter-Base Voltage V
EBO
5.0 5.0 Vdc
Collector Current I
C
1.0 1.0 Adc
Total Power Dissipation
UB:
@ T
A
= +25°C
@ T
C
= +25°C
@ T
C
= +25°C
P
T
**
1.0
5.0
1.5
W
W
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
Vdc
I
C
= 10mAdc
2N3634, 2N3635
2N3636, 2N3637
140
175
Collector-Base Cutoff Current
I
CBO
ηAdc
μAdc
μAdc
V
CB
= 100Vdc
V
CB
= 140Vdc
V
CB
= 175Vdc
2N3634, 2N3635
2N3636, 2N3637
100
10
10
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 5.0Vdc
I
EBO
50
10
ηAdc
μAdc
Collector-Emitter cutoff Current
V
CE
= 100Vdc
I
CEO
10
μAdc
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 2 of 5
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
h
FE
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 50mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
2N3634, 2N3636 25
45
50
50
30
150
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 1.0mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 50mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
2N3635, 2N3637 55
90
100
100
60
300
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 50mAdc, I
B
= 5.0mAdc
0.3
0.6
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 50mAdc, I
B
= 5.0mAdc
0.65
0.8
0.9
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
|h
fe
|
I
C
= 30mAdc, V
CE
= 30Vdc, f = 100MHz 2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
h
fe
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
Small-Signal Short-Circuit Input Impedance
h
ie
Ω
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
Small-Signal Open-Circuit Input Impedance
h
oe
200
μs
I
C
= 10mAdc, V
CE
= 10Vdc, f = 1.0kHz
Output Capacitance
C
obo
10 pF
V
CB
= 20Vdc, I
E
= 0, 100 kHz f 1.0MHz
Input Capacitance
C
ibo
75 pF
V
EB
= 1.0Vdc, I
C
= 0, 100 kHz f 1.0MHz
Noise Figure
V
CE
= 10Vdc, I
C
= 0.5mAdc, R
g
= 1.0kΩ
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
3.0
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 3 of 5
SAFE OPERATING AREA
DC Tests
T
C
= 25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 100Vdc, I
C
= 30mAdc
V
CE
= 130Vdc, I
C
= 20mAdc
2N3634, 2N3635
2N3636, 2N3637
Test 2
V
CE
= 50Vdc, I
C
= 95mAdc
Test 3
V
CE
= 5.0Vdc, I
C
= 1.0Adc

2N3634

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Small-Signal BJT
Lifecycle:
New from this manufacturer.
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