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VS-ST1200C20K1P

P1-P3P4-P6P7-P8
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Jan-15
4
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30°
60°
90°
120°
180°
Conduction Angle
ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
DC
30°
60°
90°
120°
180°
Conduction Period
ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
30°
60°
90°
120°
180°
Conduction Angle
ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 600 1200 1800 2400 3000 3600
DC
30°
60°
90°
120°
180°
Conduction Period
ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
0
500
1000
1500
2000
2500
3000
3500
4000
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST1200C..K Series
T = 125°C
J
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
0
1000
2000
3000
4000
5000
0 600 1200 1800 2400 3000 3600
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST1200C..K Series
T = 125°C
J
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Jan-15
5
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
12000
14000
16000
18000
20000
22000
24000
26000
28000
11010
0
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
ST1200C..K Series
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
0.01 0.1 1
Versus Pulse Train Duration. Control
Maximum Non Repetitive Surge Current
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Of Conduction May Not Be Maintained.
ST1200C..K Series
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0.5 1 1.5 2 2.5
3
T = 25°C
J
T = 125°C
J
ST1200C..K Series
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Jan-15
6
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Rectangular gate pulse
(3)(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
Device: ST1200C..K Series
- Thyristor
1 - Vishay Semiconductors product
2
- Essential part number
3
- 0 = Converter grade
4
- C = Ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code: Code x 100 = V
RRM
(see Voltage Ratings table)
6
- K = PUK case A-24 (K-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 120 0 C 20 K 1 -
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
P1-P3P4-P6P7-P8

VS-ST1200C20K1P

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Buy VS-ST1200C20K1P
Manufacturer:
Vishay Semiconductors
Description:
SCRs Thyristors - K-PUK
Lifecycle:
New from this manufacturer.
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