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TSM6963SDCA RVG

P1-P3P4-P6
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 1
Version: D15
TSSOP
-
8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
Packing
TSM6963SDCA RVG TSSOP-8 3Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
-4.5 A
Pulsed Drain Current, V
GS
@4.5V I
DM
-16 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1.0 A
Maximum Power Dissipation
Ta = 25°C
P
D
1.14
W
Ta = 70°C 0.73
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot (Drain) Thermal Resistance RӨ
JF
75 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
90 °C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Block Diagram
Dual P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
-20
30 @ V
GS
= -4.5V -4.5
42 @ V
GS
= -2.5V -3
68 @ V
GS
= -1.8V -2
Pin
Definition
:
1. Drain 1 8. Drain 2
2. Source 1 7. Source 2
3. Source 1 6. Source 2
4. Gate 1 5. Gate 2
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 2
Version: D15
Electrical Specifications
(Ta =25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
=V
GS
, I
D
=-250uA V
GS(TH)
-0.5 -0.7 -1.0 V
Zero Gate Voltage Drain Current V
DS
=-16V, V
GS
=0V I
DSS
-- -- -1 uA
Gate Body Leakage V
GS
=±12V, V
DS
=0V I
GSS
-- -- ±100 nA
On-State Drain Current V
DS
=-5V, V
GS
=-4.5V I
D(ON)
-25 -- -- A
Drain-Source On-State Resistance
V
GS
=-4.5V, I
D
=-4.5A
R
DS(ON)
-- 23 30
mΩ V
GS
=-2.5V, I
D
=-3A -- 30 42
V
GS
=-1.8V, I
D
=-2A -- 45 68
Forward Transconductance V
DS
=-5V, I
D
=-4.5A g
fs
-- 16 -- S
Diode Forward Voltage I
S
=-0.5A, V
GS
=0V V
SD
-- - 0.8 -1.3 V
Dynamic
b
Total Gate Charge
V
DS
=-10V, I
D
=-4.5A,
V
GS
=-4.5V
Q
g
-- 14 20
nC
Gate-Source Charge Q
gs
-- 2.1 10
Gate-Drain Charge Q
gd
-- 4.7 --
Input Capacitance
V
DS
=-10V, V
GS
=0V,
f =1.0MHz
C
iss
-- 1500 --
pF
Output Capacitance C
oss
-- 220 --
Reverse Transfer Capacitance C
rss
-- 160 --
Switching
b,C
Turn-On Delay Time
V
DD
=-10V, R
L
=10Ω,
I
D
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
t
d(on)
-- 6 11
nS
Turn-On Rise Time t
r
-- 13 23
Turn-Off Delay Time t
d(off)
-- 86 145
Turn-Off Fall Time t
f
-- 42 70
Notes:
a. pulse test: PW ≤ 300µS, duty cycle ≤ 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM6963SD
20V Dual P-Channel MOSFET
Document Number:
DS_P0000129 3
Version: D15
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
P1-P3P4-P6

TSM6963SDCA RVG

Mfr. #:
Buy TSM6963SDCA RVG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET Dual 20V N Channel Mosfet
Lifecycle:
New from this manufacturer.
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