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BYV255V-200

P1-P3P4-P5
1/5
BYV255V
®
May 2000 - Ed : 2E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED :
Insulating voltage = 2500 V
RMS
Capacitance = 55 pF
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
FEATURES
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOP
TM
this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ISOTOP
(Plastic)
Symbol Parameter Value Unit
I
F(RMS)
RMS forward current
Per diode
150 A
I
F(AV)
Average forward current δ = 0.5
Tc=110°C Per diode
100 A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
1600 A
Tstg
Tj
Storage and junction temperature range
-40to+
150
-40to+150
°C
°C
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
ISOTOP is a trademark of STMicroelectronics.
K2 A2
A1K1
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BYV255V
2/5
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*
T
j
= 25°C V
R
=V
RRM
100 µA
T
j
= 100°C
10 mA
V
F**
T
j
= 125°C I
F
= 100 A
0.85 V
T
j
= 125°C I
F
= 200 A
1.00
T
j
= 25°C I
F
= 200 A
1.15
Pulse test:*tp=5ms,duty cycle<2%
** tp = 380 µs, duty cycle<2%
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
= 25°C I
F
= 0.5A
I
R
=1A
Irr = 0.25A 55 ns
I
F
=1A
V
R
= 30V
dI
F
/dt = -50A/µs80
tfr T
j
= 25°C I
F
=1A
V
FR
=1.1xV
F
tr=5ns 10 ns
V
FP
T
j
= 25°C I
F
=1A tr=5ns 1.5 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
Per diode
0.4 °C/W
Total
0.25
Rth (c)
Coupling
0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
Symbol Test Conditions Min. Typ. Max. Unit
I
RM
T
j
= 100°C I
F
= 100A
Lp 0.05µH
Vcc 0.6 V
RRM
dIF/dt = -200A/µs16A
dI
F
/dt = -400A/µs24
TURN-OFF SWITCHING CHARACTERISTICS
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BYV255V
3/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
50
100
150
200
250
300
350
400
450
500
P=100W
P=70W
P=40W
P=20W
T
I
M
=tp/T
tp
I
M(A)
Fig.2 : Peak current versus form factor.
Tj=125 C
o
IFM(A)
1 10 100 1000
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp. )
K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
1.0E-03 1.0E-02 1.0E-01
1.0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0 20406080100120
0
10
20
30
40
50
60
70
80
90
100
110
120
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=Rth(j-c)
Fig.6 : Average current versus ambient
temperature. (duty cycle : 0.5)
0.001 0.01 0.1 1
0
100
200
300
400
500
600
700
800
900
1000
I
M(A)
IM
t
=0.5
t(s)
Tc=25 C
o
Tc=110 C
o
Tc=75 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
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P1-P3P4-P5

BYV255V-200

Mfr. #:
Buy BYV255V-200
Manufacturer:
STMicroelectronics
Description:
Rectifiers 2X100 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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