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BSZ120P03NS3EGATMA1

P1-P3P4-P6P7-P9
BSZ120P03NS3E G
1 Power dissipation 2 Drain current
P
tot
=f(T
C
); t
p
≤10 s I
D
=f(T
C
); |V
GS
|≥10 V; t
p
≤10 s
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C
1)
; D =0
Z
thJS
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
100
1000
0.1 1 10 100
-V
DS
[V]
-I
D
[A]
limited by on-state
resistance
10 µs
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
10
0
10
-1
10
-2
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t
p
[s]
Z
thJS
[K/W]
0
10
20
30
40
50
60
0 40 80 120 160
T
C
[°C]
P
tot
[W]
0
4
8
12
16
20
24
28
32
36
40
44
48
0 40 80 120 160
T
C
[°C]
-I
D
[A]
Rev. 2.1 page 4 2009-11-16
BSZ120P03NS3E G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
-4.5 V
-5.0 V
- 6 V
-10 V
0
5
10
15
20
25
30
35
40
0 10203040
-I
D
[A]
R
DS(on)
[m
Ω
]
-4.0 V
25 °C
150 °C
0
10
20
30
40
50
60
0123456
-V
GS
[V]
-I
D
[A]
0
10
20
30
40
50
0102030
-I
D
[A]
g
fs
[S]
-3.5 V
-3.7 V
-4.0 V
-4.2V
-4.5 V
-5.0 V
-10 V
0
10
20
30
40
0123
-V
DS
[V]
-I
D
[A]
Rev. 2.1 page 5 2009-11-16
BSZ120P03NS3E G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=-20 A; V
GS
=-10 V
V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=-73 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f =1 MHz I
F
=f(V
SD
)
parameter: T
j
typ.
98 %
4
6
8
10
12
14
16
18
20
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
0 5 10 15 20 25 30
-V
DS
[V]
C [pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
T
j
[°C]
-V
GS(th)
[V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.1
1
10
100
0 0.5 1 1.5
-V
SD
[V]
I
F
[A]
Rev. 2.1 page 6 2009-11-16
P1-P3P4-P6P7-P9

BSZ120P03NS3EGATMA1

Mfr. #:
Buy BSZ120P03NS3EGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
Lifecycle:
New from this manufacturer.
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