Feb. 2009
2
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
V
CE = VCES, VGE = 0V
±V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
V
CC = 600V, IC = 75A, VGE = 15V
V
CC = 600V, IC = 75A
V
GE = ±15V
R
G = 4.2Ω
Resistive load
I
E = 75A, VGE = 0V
I
E = 75A,
die / dt = –150A / µs
Junction to case, IGBT part (Per 1/6 module)
Junction to case, FWDi part (Per 1/6 module)
Case to heat sink, conductive grease applied
(Per 1/6 module) (Note 6)
I
C = 7.5mA, VCE = 10V
I
C = 75A, VGE = 15V (Note 4)
V
CE = 10V
V
GE = 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Contact thermal resistance
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
V
GE = 0V
V
CE = 0V
T
C = 25°C
Pulse (Note 1)
T
C = 25°C
Pulse (Note 1)
T
C = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Collector current
Emitter current
1200
±20
75
150
75
150
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
V
CES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
Min Typ Max
1
0.5
3.7
—
11
3.7
2.2
—
100
200
250
350
3.2
300
—
0.21
0.47
—
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
—
—
2.9
2.85
—
—
—
280
—
—
—
—
—
—
0.41
—
—
0.09
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item Test Conditions
V
GE(th)
VCE(sat)
Limits
Unit
6
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (T
j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (T
C) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
7.5
