Technical information USBUF
4/13 DocID7041 Rev 8
2.1 Application example
Figure 3. Implementation of ST solutions for USB ports
2.2 EMI filtering
Current FCC regulations requires that class B computing devices meet specified maximum
levels for both radiated and conducted EMI.
Radiated EMI covers the frequency range from 30 MHz to 1 GHz.
Conducted EMI covers the 450 kHz to 30 MHz range.
For the types of devices utilizing the USB, the most difficult test to pass is usually the
radiated EMI test. For this reason the USBUF device is aiming to minimize radiated EMI.
The differential signal (D+ and D-) of the USB does not contribute significantly to radiated or
conducted EMI because the magnetic field of both conductors cancels each other.
The inside of the PC environment is very noisy and designers must minimize noise coupling
from the different sources. D+ and D-must not be routed near high speed lines (clocks
spikes).
Induced common mode noise can be minimized by running pairs of USB signals parallel to
each other and running grounded guard trace on each side of the signal pair from the USB
controller to the USBUF device. If possible, locate the USBUF device physically near the
D+
D-
CABLE
Host/Hub USB por transceivert
D-
D+
D+
D-
Upstream port
Downstream port
USBDF01W5
D+
D-
Rt
D+ in
Gnd
D- in
D+ out
D- out
Rt
Rd
Rd
Ct
Ct
Gnd
3.3 V
Rp
Ct
Rt
Ct
Rt
D1
Gnd
D2
D4
D3
3.3V
Peripheral transceiver
USBUF01W6
D+
D-
CABLE
Host/Hub USB por transceivert
D-
D+
D+
D-
Upstream port
Downstream port
USBDF01W5
D+
D-
Rt
D+ in
Gnd
D- in
D+ out
D- out
Rt
Rd
Rd
Ct
Ct
Gnd
3.3 V
Rp
Ct
Rt
Ct
Rt
D1
Gnd
D2
D4
D3
3.3V
Peripheral transceiver
USBUF01W6
FULL SPEED CONNECTION
LOW SPEED CONNECTION
DocID7041 Rev 8 5/13
USBUF Technical information
13
USB connectors. Distance between the USB controller and the USB connector must be
minimized.
The 47 pF (C
t
) capacitors are used to bypass high frequency energy to ground and for edge
control, and are placed between the driver chip and the series termination resistors (Rt).
Both Ct and Rt should be placed as close to the driver chip as is practicable.
The USBUF ensures a filtering protection against Electromagnetic and Radio-frequency
Interferences thanks to its low-pass filter structure. This filter is characterized by the
following parameters:
cut-off frequency
Insertion loss
high frequency rejection.
2.3 ESD protection
In addition to the requirements of termination and EMC compatibility, computing devices are
required to be tested for ESD susceptibility. This test is described in the IEC 61000-4-2 and
is already in place in Europe. This test requires that a device tolerates ESD events and
remains operational without user intervention.
The USBUF is particularly optimized to perform ESD protection. ESD protection is based on
the use of device which clamps at:
V
cl
= V
BR
+ R
d
.I
PP
This protection function is spitted in 2 stages. As shown in Figure 6, the ESD strikes are
clamped by the first stage S1 and then its remaining overvoltage is applied to the second
stage through the resistor Rt. Such a configuration makes the output voltage very low at the
output.
Figure 4. USBUF typical attenuation Figure 5. Measurement configuration
1 10 100 1,000
-30
-20
-10
0
Frequency (MHz)
S21 (dB)
TEST BOARD
50
Ω
Vg
50
Ω
UUx
Technical information USBUF
6/13 DocID7041 Rev 8
Figure 6. USBUF ESD clamping behavior
Figure 7. Measurement board
To have a good approximation of the remaining voltages at both Vin and Vout stages, we
give the typical dynamical resistance value Rd. By taking into account these following
hypothesis: R
t
> R
d
, R
g
> R
d
and R
load
> R
d
, it gives these formulas:
The results of the calculation done for V
g
= 8 kV, R
g
= 330 Ω (IEC 61000-4-2 standard),
V
BR
= 7 V (typ.) and R
d
= 1 Ω (typ.) give:
Vinput = 31.2 V
Voutput = 7.95 V
This confirms the very low remaining voltage across the device to be protected. It is also
important to note that in this approximation the parasitic inductance effect was not taken into
account. This could be few tenths of volts during few ns at the V
input
side. This parasitic
effect is not present at the V
output
side due the low current involved after the resistance R
t
.
The measurements done hereafter show very clearly (figure 8) the high efficiency of the
ESD protection:
no influence of the parasitic inductances on Voutput stage
Voutput clamping voltage very close to V
BR
(breakdown voltage) in the positive way
and - V
F
(forward voltage) in the negative way
ESD Surge
Vinput
Voutput
Rload
Rg
Rt
S1
Rd
V
BR
V
BR
V
PP
Device
to be
protected
USBUF01W6
Rd
S2
TEST BOARD
ESD
SURGE
16kV
Air
Discharge
Vin Vout
UUx
V
ouput
R
t
V
BR
R
d
Vinput
+
R
t
-------------------------------------------------------=

USBUF01W6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors EMI Filter/Line Term
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet