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NRVB1240MFST1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1 Publication Order Number:
MBR1240MFS/D
MBR1240MFS,
NRVB1240MFS
SWITCHMODE
Power Rectifiers
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 140°C)
I
F(AV)
12 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 138°C)
I
FRM
20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +150 °C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
150 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
Device Package Shipping†
ORDERING INFORMATION
MBR1240MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
12 AMPERES
40 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B1240 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B1240
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR1240MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB1240MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB1240MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR1240MFS, NRVB1240MFS
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 1.7 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 12 A, T
J
= 125°C)
(i
F
= 12 A, T
J
= 25°C)
v
F
0.455
0.53
0.62
0.68
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
35
0.08
170
0.5
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBR1240MFS, NRVB1240MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= −40°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
10
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
10
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T
A
= 125°C
T
A
= 150°C
Figure 3. Typical Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
10 20 30 40
T
A
= 25°C
T
A
= −40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
10 20 30 40
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
Figure 5. Typical Junction Characteristics
V
R
, REVERSE VOLTAGE (V)
C, JUNCTION CAPACITANCE (pF)
10000
010203040
1000
100
10
T
A
= 25°C
Figure 6. Current Derating TO−220AB
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
24
0 40 80 120 16020 60 100 140
R
q
JC
= 1.7°C/W
dc
SQUARE WAVE
21
18
15
12
0
9
6
3
0
P1-P3P4-P5

NRVB1240MFST1G

Mfr. #:
Buy NRVB1240MFST1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 12 A, 40 V SCHOTTKY DIODE
Lifecycle:
New from this manufacturer.
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