NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
BTA204W-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 6 / 15
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
full cycle or half cycle; Fig. 6 - - 15 K/W
printed circuit board mounted: minimum
pad area; Fig. 7
- 70 - K/WR
th(j-a)
thermal resistance
from junction to
ambient
printed circuit board mounted: minimum
footprint; Fig. 8
- 156 - K/W
0
0
3
a
a
c
2
1
0
1
0
-
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
BTA204W-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 7 / 15
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 7. Printed circuit board pad area: SOT223
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 8. Minimum footprint SOT223
NXP Semiconductors
BTA204W-600D
3Q Hi-Com Triac
BTA204W-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 8 / 15
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
- - 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
- - 5 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
- - 5 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 10
- - 6 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 10
- - 9 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 10
- - 6 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - - 6 mA
V
T
on-state voltage I
T
= 2 A; T
j
= 25 °C; Fig. 12 - 1.2 1.5 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.25 0.4 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (67% of
V
DRM
); exponential waveform; gate
open circuit
20 - - V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 0.1 V/µs; gate open circuit
5 - - A/msdI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
1 - - A/ms

BTA204W-600D,135

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 3Q TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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