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BTA204W-600D,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
NXP Semiconductors
BT
A204W-600D
3Q Hi-Com T
riac
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
6 / 15
8.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
full cycle or half cycle;
Fig. 6
-
-
15
K/W
printed circuit board mounted: minimum
pad area;
Fig. 7
-
70
-
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
printed circuit board mounted: minimum
footprint;
Fig. 8
-
156
-
K/W
0
0
3
a
a
c
2
1
0
1
0
-
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 6.
T
ransient thermal impedance from junction to solder point as a function of pulse width
NXP Semiconductors
BT
A204W-600D
3Q Hi-Com T
riac
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
7 / 15
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 7.
Printed circuit board pad area: SOT223
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 8.
Minimum footprint SOT223
NXP Semiconductors
BT
A204W-600D
3Q Hi-Com T
riac
BTA204W-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
15 August 2014
8 / 15
9.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
-
-
5
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
-
-
5
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
-
-
5
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 10
-
-
6
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 10
-
-
9
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 10
-
-
6
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 1
1
-
-
6
mA
V
T
on-state voltage
I
T
= 2 A; T
j
= 25 °C;
Fig. 12
-
1.2
1.5
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.25
0.4
-
V
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (67% of
V
DRM
); exponential waveform; gate
open circuit
20
-
-
V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 0.1 V/µs; gate open circuit
5
-
-
A/ms
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
1
-
-
A/ms
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BTA204W-600D,135
Mfr. #:
Buy BTA204W-600D,135
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 3Q TRIAC
Lifecycle:
New from this manufacturer.
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BTA204W-600D,135