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SISH434DN-T1-GE3

P1-P3P4-P6P7-P8
SiSH434DN
www.vishay.com
Vishay Siliconix
S18-0686-Rev. A, 09-Jul-2018
4
Document Number: 79242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
=25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.000
0.004
0.008
0.012
0.016
0.020
246810
I
D
=16.2A
T
J
=25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
0.01
100
1
100
0.01
0.1
1ms
10 s
10 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
DC
BVDSS Limited
1s
100 ms
100 µs
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
SiSH434DN
www.vishay.com
Vishay Siliconix
S18-0686-Rev. A, 09-Jul-2018
5
Document Number: 79242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
0
10
20
30
40
50
60
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
SiSH434DN
www.vishay.com
Vishay Siliconix
S18-0686-Rev. A, 09-Jul-2018
6
Document Number: 79242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79242
.
10
-3
10
-2
110
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P8

SISH434DN-T1-GE3

Mfr. #:
Buy SISH434DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds; +/-20V Vgs PowerPAK 1212-8SH
Lifecycle:
New from this manufacturer.
Delivery:
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