NSBA114EDXV6T1, NSBA114EDXV6T5
http://onsemi.com
4
Figure 1. Derating Curve − ALL DEVICES
300
200
150
100
50
0
−50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
R
JA
= 490°C/W
250
P
D
, POWER DISSIPATION (mW)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=−25°C
25°C
1 2 3 4 5
6 7 8 9 10
Figure 3. DC Current Gain Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
−25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=−25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
0
T
A
=−25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
TYPICAL ELECTRICAL CHARACTERISTICS
— NSBA114EDXV6T1
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
ALL NSBA114EDXV6T1 SERIES DEVICES