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DD710N16KHPSA2
P1-P3
P4-P6
P7-P9
P10-P10
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD710N16K
Date of Publication 2017-
07
-
13
Revision 3.3
1/
10
Se
ite/page
Key Parameters
V
DRM
/ V
RRM
16
00V
I
F
AVM
710
A (T
C
=
100
°C)
3570A (T
C
=55°
C)
I
F
SM
260
00A
v
T0
0,75
V
r
T
0,145
mΩ
R
thJC
0,062K/W
Baseplate
60mm
W
eight
1500g
For type designation
please refer to actual sh
ortform
catalog
http://www.ifbip.com
/catalog
Merkmale
Features
Druckk
onta
kt
- Technologie für h
ohe
Verlässlichkeit
Pressure contact techn
ology for high reliabilit
y
Industrie-Stand
ard-Gehäuse
Industial standard p
ackage
Elektrisch isolierte Gr
undplatte
Electrically insulated
baseplate
Advanced m
edium power technolog
y
Advanced m
edium power technolog
y
Typische Anwendung
en
Typical Applications
Gleichrichter für Antr
iebsapplikationen
Rectifier for Drives Ap
plications
Gleichricher für UP
S
Rectifiers for UPS
Batterieladegleichrichter
Battery chargers
content of custom
er DMX code
DMX c
ode
DMX code
digit
digit quantity
serial number
1..7
7
SP material num
ber
8..16
9
datecode (production
day)
17..18
2
datecode (production
year)
19..20
2
datecode (production m
onth)
21..22
2
vT class
23..26
4
QR class
27..30
4
www.ifbip.com
support@infineon-bip.com
1
2
3
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD710N16K
Date of Publication 2017-
07
-
13
Revision 3.3
2/
10
Se
ite/page
Elektrische Eigens
chaften / Elec
trical properties
Höchstzuläs
sige Werte / Ma
ximum rated value
s
DD710N16K
Periodische Spitze
nsperrspannun
g
repetitive peak re
verse voltage
s
T
vj
=
-40°C... T
vj max
V
RRM
1600
V
Stoßspitzenspe
rrspannung
non
-repetitive peak reve
rse voltag
e
T
vj
= +25°C... T
vj max
V
RSM
1600
V
Durchlaßstro
m-Grenzeffektivw
ert
maximum RM
S on-state current
I
FRMSM
1100
A
D
auergrenzstrom
average
on-state current
T
C
=
100°C
I
FAVM
710
A
Stoßstrom-Grenzw
ert
surge current
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I
FSM
26000
22000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I²t
3380000
2420000
A²s
A²s
Charakteristische
Werte / Char
acteristic value
s
Durchlaßspannung
on
-state voltage
T
vj
= T
vj max
,
i
F
=
2500
A
v
F
max.
1,31
V
Schleusenspannun
g
threshold voltage
T
vj
= T
vj max
V
(TO)
max.
0,75
V
Ersatzwider
stand
slope resistance
T
vj
= T
vj max
r
T
max.
0,145
m
Ω
Sperrstrom
reverse curren
t
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
40
mA
Isolations-Prüfspa
nnung
insulation test vo
ltage
RMS, f = 50Hz,
t = 1 sec
RMS, f = 50Hz,
t = 1 min
V
ISOL
3,6
3
,0
kV
kV
Thermische Ei
genschaften / T
hermal properties
Innerer Wärmew
iderstand
thermal resistance
, junction to
case
pro Modu
l / per Module,
Θ
= 180°
sin
pro Zwe
ig / per arm,
Θ
= 180° sin
pro Modu
l / per Module, DC
pro Zwe
ig / per arm, DC
R
thJC
max.
max.
max.
max.
0,0325
0,0650
0,0310
0,0620
K/W
K/W
K/W
K/W
Übergang
s-Wärmewiderstand
thermal resistance
, case to
heatsink
pro Modu
l / per Module
pro Zwe
ig / per arm
R
thCH
max.
max.
0,01
0,02
K/W
K/W
Höchstzuläs
sige Sperrschicht
temperatur
maximum junction
temperature
T
vj max
150
°C
Betriebstemperatur
operating temperatur
e
T
c op
- 40...+150
°C
Lagertemperatur
storage te
mperature
T
stg
- 40...+150
°C
prepared by:
HR
date of publica
tion:
201
7-07-
13
approve
d by:
ML
revision:
3.3
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD710N16K
Date of Publication 2017-
07
-
13
Revision 3.3
3/
10
Se
ite/page
Mechanische E
igenschaften
/ Mechanical propert
ies
Gehäuse, siehe
Anlage
case, see annex
Seite 4
page 4
Si
-Element mi
t Druckkontakt
Si
-pellet w
ith pressure con
tact
Innere Isolation
internal insulation
Basisisolierung (S
chutzklasse
1, EN 6114
0)
Basic insulation (
class 1, IEC
61140)
AlN
Anzugsdreh
moment für me
chanische Anschlüs
se
mounting torqu
e
Toleranz ±15%
M1
6
Nm
Anzugsdreh
moment für elektris
che Anschlü
sse
terminal connec
tion torque
Toleranz ±10%
M2
12
Nm
Gewicht
weight
G
typ.
1500
g
Kriechstrecke
creepage distance
19
mm
Schwingfestigkei
t
vibration resistan
ce
f = 50Hz
50
m/s²
file-No.
E 83335
P1-P3
P4-P6
P7-P9
P10-P10
DD710N16KHPSA2
Mfr. #:
Buy DD710N16KHPSA2
Manufacturer:
Infineon Technologies
Description:
DIODE MODULE GP 1600V 710A
Lifecycle:
New from this manufacturer.
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