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VIT10202C-M3/4W

P1-P3P4-P6
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
Revision: 12-Jan-17
1
Document Number: 87796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.58 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology Gen 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
200 V
I
FSM
100 A
V
F
at I
F
= 5 A (T
A
= 125 °C) 0.65 V
T
J
max. 175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
K
VT10202C
VIT10202CVBT10202C
TMBS
®
ITO-220AB
1
2
3
VFT10202C
PIN 1
PIN 2
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10202C VFT10202C VBT10202C VIT10202C UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
10
A
per diode 5
Maximum DC reverse voltage V
DC
160 V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
100 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
Revision: 12-Jan-17
2
Document Number: 87796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
I
F
= 2.5 A
T
A
= 25 °C
V
F
0.74 -
V
I
F
= 5.0 A 0.80 0.88
I
F
= 2.5 A
T
A
= 125 °C
0.58 -
I
F
= 5.0 A 0.65 0.73
Reverse current
(2)
V
R
= 160 V
T
A
= 25 °C
I
R
0.2 - μA
T
A
= 125 °C 0.4 - mA
V
R
= 200 V
T
A
= 25 °C - 150 μA
T
A
= 125 °C 1.0 5 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10202C VFT10202C VBT10202C VIT10202C UNIT
Typical thermal resistance
per diode R
JC
3.4 6.8 3.4 3.4
°C/Wper device R
JC
2.2 4.4 2.2 2.2
per device R
JA
(1)(2)
52 60 52 52
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT10202C-M3/4W 1.88 4W 50/tube Tube
TO-263AB VBT10202C-M3/4W 1.37 4W 50/tube Tube
TO-263AB VBT10202C-M3/8W 1.37 8W 800/reel Tape and reel
TO-262AA VIT10202C-M3/4W 1.44 4W 50/tube Tube
ITO-220AB VFT10202C-M3/4W 1.72 4W 50/tube Tube
VT10202C, VFT10202C, VBT10202C, VIT10202C
www.vishay.com
Vishay General Semiconductor
Revision: 12-Jan-17
3
Document Number: 87796
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
0
1
2
3
4
5
6
7
8
9
10
11
12
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
R
thJA
= R
thJC
T
A
, R
thJA
V(B,I)T10202C
VFT10202C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
T
A
= 175 °C
0.01
0.1
1
10
100
1000
10 000
100 000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 175 °C
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
10
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
V(B,I)T10202C
VFT10202C
P1-P3P4-P6

VIT10202C-M3/4W

Mfr. #:
Buy VIT10202C-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A 200V Trench Stky Rectifier
Lifecycle:
New from this manufacturer.
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