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MC74VHC1G01DTT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 16
1 Publication Order Number:
MC74VHC1G01/D
MC74VHC1G01
Single 2-Input NAND Gate
with Open Drain Output
The MC74VHC1G01 is an advanced high speed CMOS 2−input
NAND gate with an open drain output fabricated with silicon gate
CMOS technology.
The internal circuit is composed of multiple stages, including an
open drain output which provides the ability to set output switching
level. This allows the MC74VHC1G01 to be used to interface 5 V
circuits to circuits of any voltage between V
CC
and 7 V using an
external resistor and power supply.
The MC74VHC1G01 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
= 3.7 ns (Typ) at V
CC
= 5 V
• Low Internal Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
5
1
2
4
3
V
CC
IN B
IN A
OUT Y
GND
IN A
IN B
OUT Y
&
OVT
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
www.onsemi.com
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
V0 = Device Code
M = Date Code*
G = Pb−Free Package
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
V0 M G
G
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
Z
Z
Z
L
Y
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5V
CC
OUT Y
(Note: Microdot may be in either location)
1
5
V0 M G
G
M
*Date Code orientation and/or position may
vary depending upon manufacturing location.
MC74VHC1G01
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current −20 mA
I
OK
DC Output Diode Current V
OUT
t GND; V
OUT
u V
CC
$20 mA
I
OUT
DC Output Sink Current, per Pin 25 mA
I
CC
DC Supply Current, V
CC
and GND Pin $25 mA
T
STG
Storage Temperature Range *65 to )150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias )150 °C
q
JA
Thermal Resistance SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
P
D
Power Dissipation in Still Air at 85°C SC70−5/SC−88A
TSOP−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 7.0 V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
MC74VHC1G01
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 255C T
A
v 855C
*555C v T
A
v
1255C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
LKG
Z−State Output
Leakage Current
V
IN
= V
IL
V
OUT
= V
CC
or GND
5.5 $5 $10 $10
mA
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
$0.1 $1.0 $1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
I
OFF
Power Off−Output
Leakage Current
V
OUT
= 5.5 V
V
IN
= 5.5 V
0 0.25 2.5 5
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbol
Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
t
PZL
Maximum Output
Enable Time,
Input A or B to Y
V
CC
= 3.3 ± 0.3 VC
L
= 15 pF
R
L
= R
I
= 500 WC
L
= 50 pF
5.5
8.0
7.9
11.4
9.5
13.0
11.0
15.5
ns
V
CC
= 5.0 ± 0.5 VC
L
= 15 pF
R
L
= R
I
= 500 WC
L
= 50 pF
3.7
5.2
5.5
7.5
6.5
8.5
8.0
10.0
t
PLZ
Maximum Output
Disable Time
V
CC
= 3.3 ± 0.3 V C
L
= 50 pF
R
L
= R
I
= 500 W
8.0 11.4 13.0 15.5 ns
V
CC
= 5.0 ± 0.5 V C
L
= 50 pF
R
L
= R
I
= 500 W
5.2 7.5 8.5 10.0
C
IN
Maximum Input
Capacitance
4 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 6)
Typical @ 25°C, V
CC
= 5.0V
pF
18
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74VHC1G01DTT1G

Mfr. #:
Buy MC74VHC1G01DTT1G
Manufacturer:
ON Semiconductor
Description:
Logic Gates 2-5.5V Single NAND 2-Input w/Open Drain
Lifecycle:
New from this manufacturer.
Delivery:
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