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BSN254,126

P1-P3P4-P6P7-P9P10-P12
2002 Feb 19 4
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
Fig.2 Switching times test circuit.
handbook, halfpage
MBB691
50 Ω
V
DD
= 50 V
I
D
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
t
on
t
off
OUTPUT
INPUT
handbook, halfpage
0
1.2
0.8
0.4
0
50 100 200150
MRC238
P
tot
(W)
T
amb
(°C)
Fig.4 Power derating curve.
handbook, halfpage
02 10
V
DS
(V)
1.2
0.4
0
0.8
4
(1)
(2)
(3)
(4)
(5)
(7)
6
I
D
(A)
8
MGU569
(6)
Fig.5 Typical output characteristics.
T
j
=25°C.
(1) V
GS
=10V.
(2) V
GS
=5V.
(3) V
GS
=4V.
(4) V
GS
= 3.5 V.
(5) V
GS
=3V.
(6) V
GS
= 2.5 V.
(7) V
GS
=2V.
2002 Feb 19 5
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
02 10
V
GS
(V)
1.6
1.2
0.4
0
0.8
1.4
0.6
0.2
1
46
I
D
(A)
8
MGU570
Fig.6 Typical transfer characteristics.
V
DS
= 10 V; T
j
=25°C.
handbook, halfpage
20
10
5
0
15
MGU571
10
−1
110
I
D
(A)
R
DSon
(Ω)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.7 Drain-source on-state resistance as a
function of drain current; typical values.
T
j
=25°C.
(1) V
GS
= 2.5 V.
(2) V
GS
=3V.
(3) V
GS
= 3.5 V.
(4) V
GS
=4V.
(5) V
GS
=5V.
(6) V
GS
=10V.
handbook, halfpage
250
010 30
0
20
V
DS
(V)
C
(pF)
50
100
150
200
MGU572
Ciss
Coss
Crss
Fig.8 Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
V
GS
= 0; f = 1 MHz; T
j
=25°C.
2002 Feb 19 6
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
−50 0 50
(1)
(2)
150
2
1.5
0.5
0
1
100
k
T
j
(°C)
MGU573
Fig.9 Temperature coefficient of drain-source
on-state resistance; typical values.
k
R
DSon
at T
j
R
DSon
at 25 °C
-----------------------------------------
=
Typical R
DSon:
(1) I
D
= 250 mA; V
GS
=10V.
(2) I
D
= 20 mA; V
GS
= 2.4 V.
handbook, halfpage
−50 0 50 150
1.25
0
1
100
k
T
j
(°C)
0.75
0.5
0.25
MGU574
Fig.10 Temperature coefficient of gate-source
threshold voltage; typical values.
k
V
GSth
at T
j
V
GSth
at 25 °C
----------------------------------------
=
Typical V
GSth
at 1 mA.
P1-P3P4-P6P7-P9P10-P12

BSN254,126

Mfr. #:
Buy BSN254,126
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 250V 310MA SOT54
Lifecycle:
New from this manufacturer.
Delivery:
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