NXP Semiconductors
BTA410Y-800BT
3Q Hi-Com Triac
BTA410Y-800BT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 June 2014 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
- 10 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 100 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 110 A
I
2
t I
2
t for fusing
t
p
= 10 ms; sine-wave pulse - 50
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
T
mb
(°C)
-50 1501000 50
003aaj475
4
8
12
I
T(RMS)
(A)
0
120 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
0
5
10
15
20
25
surge duration (s)
10
-2
10110
-1
003aaj474
I
T(RMS)
(A)
f = 50 Hz; T
mb
= 120 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
