NCV8450ASTT3G

© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 5
1 Publication Order Number:
NCV8450/D
NCV8450, NCV8450A
Self-Protected High Side
Driver with Temperature
and Current Limit
The NCV8450/A is a fully protected High−Side Smart Discrete
device with a typical R
DS(on)
of 1.0 W and an internal current limit of
0.8 A typical. The device can switch a wide variety of resistive,
inductive, and capacitive loads.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
Loss of Ground Protection
ESD Protection
Slew Rate Control for Low EMI
Very Low Standby Current
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Automotive
Industrial
PRODUCT SUMMARY
Symbol Characteristics Value Unit
V
IN_CL
Overvoltage Protection 54 V
V
D(on)
Operation Voltage 4.5 − 45 V
R
on
On−State Resistance 1.0
W
www.onsemi.com
MARKING
DIAGRAM
1
AYW
XXXXXG
G
XXXXX = V8450 or 8450A
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
SOT−223
(TO−261)
CASE 318E
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
NCV8450, NCV8450A
www.onsemi.com
2
Figure 1. Block Diagram
Control
Logic
R_IN
Current
Limitation
Overtemperature
Detection
Regulated
Charge Pump
Output
Clamping
V
D
(Pins 2, 4)
OUT
(Pin 3)
IN
(Pin 1)
PACKAGE PIN DESCRIPTION
Pin # Symbol Description
1 IN Control Input, Active Low
2 V
D
Supply Voltage
3 OUT Output
4 V
D
Supply Voltage
NCV8450, NCV8450A
www.onsemi.com
3
MAXIMUM RATINGS
Rating Symbol
Value
Unit
Min Max
DC Supply Voltage (Note 1) V
D
−16 45 V
Load Dump Protection
(RI = 2 W, t
d
= 400 ms, V
IN
= 0, 10 V, I
L
= 150 mA, V
bb
= 13.5 V)
V
Loaddump
85 V
Input Current I
in
−15 15 mA
Output Current (Note 1) I
out
Internally Limited A
Total Power Dissipation
@ T
A
= 25°C (Note 2)
@ T
A
= 25°C (Note 3)
P
D
1.13
1.60
W
Electrostatic Discharge (Note 4)
(Human Body Model (HBM) 100 pF/1500 W)
Input
All other
1
5
kV
Single Pulse Inductive Load Switching Energy (Note 4)
(V
DD
= 13.5 V, I = 465 mApk, L = 200 mH, T
JStart
= 150°C)
E
AS
29 mJ
Operating Junction Temperature T
J
−40 +150 °C
Storage Temperature T
storage
−55 +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Minimum Pad.
3. 1 in square pad size, FR−4, 1 oz Cu.
4. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Value Unit
Thermal Resistance (Note 5)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
R
q
JA
R
q
JA
110
78.3
K/W
5. Not subjected to production testing.
Figure 2. Applications Test Circuit
NCV8450/A
OUTIN
V
D
I
D
V
OUT
I
IN
+

NCV8450ASTT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Switch ICs - Power Distribution NCV8450A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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