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VS-15AWL06FN-M3

P1-P3P4-P6P7-P8
VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
1
Document Number: 93568
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Ultrafast Rectifier, 15 A FRED Pt
®
FEATURES
• Ultrafast recovery time, extremely low V
F
and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art, ultralow V
F
, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
0.85 V
t
rr
(typ.) 60 ns
T
J
max. 175 °C
Diode variation Single die
TO-252AA (D-PAK)
VS-15EWL06FN-M3
2, 4
3
Anode
1
N/C
VS-15AWL06FN-M3
4, 2
3
Anode
1
Anode
Base cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 148 °C 15
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 180
Peak repetitive forward current I
FM
T
C
= 148 °C, f = 20 kHz, d = 50 % 30
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 0.99 1.05
I
F
= 15 A, T
J
= 150 °C - 0.85 0.92
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 150 °C, V
R
= V
R
rated - - 120
Junction capacitance C
T
V
R
= 600 V - 11 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
2
Document Number: 93568
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 120
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 190 -
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 220 -
T
J
= 125 °C - 290 -
Peak recovery current I
RRM
T
J
= 25 °C - 21 -
A
T
J
= 125 °C - 25 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 2.6 -
μC
T
J
= 125 °C - 4 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.41.8
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
--70
Approximate weight
0.3 g
0.01 oz.
Marking device Case style TO-252AA (D-PAK)
15AWL06FN
15EWL06FN
VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
3
Document Number: 93568
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
0.2 0.4 0.6 1.0 1.4 1.80.8 1.2 1.6
0.1
1
10
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.0001
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
1
100
10
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P8

VS-15AWL06FN-M3

Mfr. #:
Buy VS-15AWL06FN-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 15A 600V 60ns Ultrafast
Lifecycle:
New from this manufacturer.
Delivery:
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