VS-15AWL06FN-M3, VS-15EWL06FN-M3
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Vishay Semiconductors
Revision: 04-Oct-16
1
Document Number: 93568
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Ultrafast Rectifier, 15 A FRED Pt
®
FEATURES
• Ultrafast recovery time, extremely low V
F
and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art, ultralow V
F
, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
0.85 V
t
rr
(typ.) 60 ns
T
J
max. 175 °C
Diode variation Single die
TO-252AA (D-PAK)
VS-15EWL06FN-M3
2, 4
3
Anode
1
N/C
VS-15AWL06FN-M3
4, 2
3
Anode
1
Anode
Base cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 148 °C 15
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 180
Peak repetitive forward current I
FM
T
C
= 148 °C, f = 20 kHz, d = 50 % 30
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 0.99 1.05
I
F
= 15 A, T
J
= 150 °C - 0.85 0.92
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 150 °C, V
R
= V
R
rated - - 120
Junction capacitance C
T
V
R
= 600 V - 11 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH