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VS-16RIA120

P1-P3P4-P6P7-P8
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
1
Document Number: 93695
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Medium Power Phase Control Thyristors
(Stud Version), 16 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
ELECTRICAL SPECIFICATIONS
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
p
5 ms
PRODUCT SUMMARY
Package TO-208AA (TO-48)
Diode variation Single SCR
I
T(AV)
16 A
V
DRM
/V
RRM
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
V
TM
1.75 V
I
GT
60 mA
T
J
-65 °C to +125 °C
TO-208AA (TO-48)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
16 A
T
C
85 °C
I
T(RMS)
35 A
I
TSM
50 Hz 340
A
60 Hz 360
I
2
t
50 Hz 574
A
2
s
60 Hz 524
V
DRM
/V
RRM
100 to 1200 V
t
q
Typical 110 μs
T
J
-65 to +125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
(1)
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-16RIA
10 100 150 20
20 200 300
10
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
2
Document Number: 93695
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
•t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 16RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
16 A
85 °C
Maximum RMS on-state current I
T(RMS)
35 A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
340
A
t = 8.3 ms 360
t = 10 ms
100 % V
RRM
reapplied
285
t = 8.3 ms 300
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
574
A
2
s
t = 8.3 ms 524
t = 10 ms
100 % V
RRM
reapplied
405
t = 8.3 ms 375
Maximum I
2
t for fusing I
2
t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
5740 A
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
),
T
J
= T
J
maximum
0.97
V
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.24
Low level value of
on-state slope resistance
r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
),
T
J
= T
J
maximum
17.9
m
High level value of
on-state slope resistance
r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 13.6
Maximum on-state voltage V
TM
I
pk
= 50 A, T
J
= 25 °C 1.75 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 6 V, resistive load
130
mA
Latching current I
L
200
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise
of turned-on current
V
DRM
600 V
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15 , t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
200
A/μs
V
DRM
800 V 180
V
DRM
1000 V 160
V
DRM
1600 V 150
Typical turn-on time t
gt
T
J
= 25 °C,
at rated V
DRM
/V
RRM
, T
J
= 125 °C
0.9
μs
Typical reverse recovery time t
rr
T
J
= T
J
maximum,
I
TM
= I
T(AV)
, t
p
> 200 μs, dI/dt = - 10 A/μs
4
Typical turn-off time t
q
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
100
V/μs
T
J
= T
J
maximum linear to 67 % rated V
DRM
300
(1)
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
3
Document Number: 93695
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum 1.5 A
Maximum peak negative gate voltage -V
GM
T
J
= T
J
maximum 10 V
DC gate current required to trigger I
GT
T
J
= - 65 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
90
mAT
J
= 25 °C 60
T
J
= 125 °C 35
DC gate voltage required to trigger V
GT
T
J
= - 65 °C 3.0
VT
J
= 25 °C 2.0
T
J
= 125 °C 1.0
DC gate current not to trigger I
GD
T
J
= T
J
maximum, V
DRM
= Rated value 2.0 mA
DC gate voltage not to trigger V
GD
T
J
= T
J
maximum,
V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
0.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
and storage temperature range
T
J
, T
Stg
-65 to +125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.86
K/W
Maximum thermal resistance,
case to heat sink
R
thCS
Mounting surface, smooth, flat and greased 0.35
TO NUT TO DEVICE
Mounting torque
Lubricated threads
(Non-lubricated threads)
20 (27.5) 25 lbf in
0.23 (0.32) 0.29 kgf · m
2.3 (3.1) 2.8 N · m
Approximate weight
14 g
0.49 oz.
Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.21 0.15
T
J
= T
J
maximum K/W
120° 0.25 0.25
90° 0.31 0.34
60° 0.45 0.47
30° 0.76 0.76
P1-P3P4-P6P7-P8

VS-16RIA120

Mfr. #:
Buy VS-16RIA120
Manufacturer:
Vishay Semiconductors
Description:
SCRs 1200 Volt 16 Amp
Lifecycle:
New from this manufacturer.
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