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BAT721S,215

P1-P3P4-P6P7-P9P10-P12
1PS76SB21_BAT721_SER_6 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 06 — 21 December 2006 3 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 4. Ordering information
Type number Package
Name Description Version
1PS76SB21 SC-76 plastic surface-mounted package; 2 leads SOD323
BAT721 - plastic surface-mounted package; 3 leads SOT23
BAT721A
BAT721C
BAT721S
Table 5. Marking codes
Type number Marking code
[1]
1PS76SB21 S1
BAT721 L7*
BAT721A L8*
BAT721C L9*
BAT721S L0*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 40 V
I
F
forward current - 200 mA
I
FSM
non-repetitive peak forward
current
half sine wave;
JEDEC method;
t
p
= 8.3 ms
-1A
T
j
junction temperature - 125 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
1PS76SB21_BAT721_SER_6 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 06 — 21 December 2006 4 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
1PS76SB21 - - 450 K/W
BAT721 - - 500 K/W
BAT721A - - 500 K/W
BAT721C - - 500 K/W
BAT721S - - 500 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
=10mA
[1]
- - 300 mV
I
F
= 100 mA
[1]
- - 420 mV
I
F
= 200 mA
[1]
- - 550 mV
I
R
reverse current V
R
=30V --15µA
V
R
= 30 V; T
j
= 100 °C --3 mA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz - 40 50 pF
1PS76SB21_BAT721_SER_6 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 06 — 21 December 2006 5 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(4) T
amb
= −40 °C
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(4) T
amb
= −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
T
amb
=25°C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
006aaa689
1
10
10
2
10
3
I
F
(mA)
10
−1
V
F
(mV)
0 600400200
(1) (2) (3) (4)
006aaa690
I
R
(mA)
V
R
(V)
0403010 20
10
−4
10
−2
1
10
10
−5
10
−3
10
−1
10
−6
(1)
(2)
(3)
(4)
4030
V
R
(V)
C
d
(pF)
01020
10
2
10
1
mbk574
P1-P3P4-P6P7-P9P10-P12

BAT721S,215

Mfr. #:
Buy BAT721S,215
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 40V 200MA
Lifecycle:
New from this manufacturer.
Delivery:
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